Functional Properties and Band Gap Engineering of ZnO-GaN Alloys
Metadata
Show metadataAppears in the following Collection
- Fysisk institutt [3682]
Abstract
Renewable energy sources play a vital role in handling the increasing energy demand, as well as the aim to reduce carbon emissions. New materials for solar cell applications are being developed for this sole reason. The ZnO-GaN (ZOGN) semiconductor alloys, consisting of two industrial well-proven materials with intriguing optical properties, have been found to yield tunable absorption from UV- and well in to the visible part of the solar spectrum, due to the so-called band bowing effect. The alloys have been developed and utilized for hydrogen production through overall water-splitting, and also show promising properties for optoelectronics. In this work, the fundamental properties of ZOGN alloys have been investigated with the aim of utilization in applications as solar cells, photo detectors and photo diodes. Highly crystalline alloy thin films, grown using magnetron sputtering, have been investigated in terms of structural, optical and electrical properties. In particular, the mechanisms governing the band bowing effect observed in the materials have been explored, in order to understand and control the tunable absorption. This control is highly relevant for applications as solar cells, photo diodes and overall water-splitting.List of papers
Paper I. V. S. Olsen, C. Bazioti, A. Azarov, B. G. Svensson, A. Yu. Kuznetsov, Ø. Prytz and L. Vines, Bandgap bowing in crystalline (ZnO)1-x(GaN)x thin films; influence of composition and structural properties, Semiconductor Science and Technology 34, 015001 (2019). doi:10.1088/1361-6641/aaee4a. The article is not available in DUO due to publisher restrictions. The published version is available at: https://doi.org/10.1088/1361-6641/aaee4a |
Paper II. V. S. Olsen, C. Bazioti, G. Baldissera, A. Azarov, Ø. Prytz, C. Persson, B.G. Svensson, A. Yu. Kuznetsov and L. Vines, Effects of Substrate and Post-Deposition Annealing on Structual and Optical Properties of (ZnO)1-x(GaN)x Films, Physica Status Solidi B 256, 1800529 (2019). doi:10.1002/pssb.201800529. The article is included in the thesis. Also available at: https://doi.org/10.1002/pssb.201800529 |
Paper III. V. S. Olsen, G. Baldissera, C. Zimmermann, C. S. Granerød, C. Bazioti, A. Galeckas, B. G. Svensson, A. Yu. Kuznetsov, C. Persson, Ø. Prytz and L. Vines, Evidence of the defect band mechanism responsible for the band gap evolution in (ZnO)1-x(GaN)x alloys, Physical Review B 100, 165201 (2019). doi:10.1103/PhysRevB.100.165201. The article is included in the thesis. Also available in DUO: http://hdl.handle.net/10852/74357 |
Paper IV. C. Bazioti, V. S. Olsen, A. Yu. Kuznetsov, L. Vines and Ø. Prytz, Formation of N2 bubbles along grain boundaries in (ZnO)1-x(GaN)x: nanoscale STEM-EELS studies, Physical Chemistry Chemical Physics Communications (2020). doi:10.1039/c9cp06025a. The article is included in the thesis. Also available at: https://doi.org/10.1039/c9cp06025a |
Paper V. C. Bazioti, V. S. Olsen, A. Yu. Kuznetsov, L. Vines and Ø. Prytz, Interfacial properties and the resulting defects of (ZnO)1-x(GaN)x thin films grown on c-Al2O3, Manuscript in preparation for publication, 2019. To be published. The paper is not available in DUO awaiting publishing. |