Intrinsic bulk and interface defects in 4H silicon carbide
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Abstract
No abstract.List of papers
Paper I Enhanced annealing of implantation-induced defects in 4H-SiC by thermal oxidation L. S. Løvlie and B. G. Svensson Copyright 2011 American Institute of Physics Applied Physics Letters 98, 052108 (2011). https://doi.org/10.1063/1.3531755 |
Paper II Kinetics of oxidation-enhanced annealing of implantation-induced defects in 4HSiC Published as: L. S. Løvlie and B. G. Svensson Oxidation-enhanced annealing of implantation-induced Z1/2 centers in 4H-SiC: Reaction kinetics and modeling Phys. Rev. B 86, 075205 (2012) Copyright 2012 American Physical Society The paper is removed from the thesis in DUO due to publisher restrictions. The published version is available at: https://doi.org/10.1103/PhysRevB.86.075205 |
Paper III Enhanced annealing of MeV ion implantation damage in n-type 4H silicon carbide by thermal oxidation L. S. Løvlie and B. G. Svensson Materials Science Forum Vols. 679-680, pp. 233-236 (2011). The paper is removed from the thesis in DUO due to publisher restrictions. The published version is available at: https://doi.org/10.4028/www.scientific.net/MSF.679-680.233 |
Paper IV A laterally resolved DLTS study of intrinsic defect diffusion in 4H-SiC after low energy focused proton beam irradiation L. S. Løvlie, L. Vines and B. G. Svensson Materials Science Forum Vols. 645-648, pp. 431-434 (2010). The paper is removed from the thesis in DUO due to publisher restrictions. The published version is available at: https://doi.org/10.4028/www.scientific.net/MSF.645-648.431 |
Paper V Long range lateral migration of intrinsic point defects in n-type 4H-SiC L. S. Løvlie, L. Vines and B. G. Svensson Accepted version. Journal of Applied Physics 111, 103719 (2012) Copyright 2012 American Institute of Physics https://doi.org/10.1063/1.4716181 |
Paper VI Analysis of electron traps at the 4H-SiC/ SiO2 interface; influence by nitrogen implantation prior to wet oxidation I. Pintilie, C. M. Teodorescu, F. Moscatelli, R. Nipoti, A. Poggi, S. Solmi, L. S. Løvlie and B. G. Svensson Journal of Applied Physics 108, 024503 (2010). Copyright 2010 American Institute of Physics https://doi.org/10.1063/1.3457906 |
Paper VII Non-nitridated oxides: abnormal behaviour of n-4H-SiC / SiO2 capacitors at low temperature caused by near interface states I. Pintilie, F. Moscatelli, R. Nipoti, A. Poggi, S. Solmi, L. S. Løvlie and B. G. Svensson, Materials Science Forum Vols. 679-680, pp. 346-349 (2011). The paper is removed from the thesis in DUO due to publisher restrictions. The published version is available at: https://doi.org/10.4028/www.scientific.net/MSF.679-680.346 |
Paper VIII Interface states in 4H- and 6H-SiC MOS capacitors: a comparative study between conductance spectroscopy and thermal dielectric relaxation current technique L. S. Løvlie, I. Pintilie, S. Kumar C. P., U. Grossner, B. G. Svensson, S. Beljakowa, S. A. Reshanov, M. Krieger and G. Pensl Materials Science Forum Vols. 615-617, pp. 497-500 (2009). The paper is removed from the thesis in DUO due to publisher restrictions. The published version is available at: https://doi.org/10.4028/www.scientific.net/MSF.615-617.497 |