Originalversjon
Applied Physics Letters. 2022, 121 (19):191601, DOI: https://doi.org/10.1063/5.0120103
Sammendrag
Ion implantation induced phase transformation and the crystal structure of a series of ion implanted β-Ga 2 O 3 samples were studied using electron diffraction, high resolution transmission electron microscopy, and scanning transmission electron microscopy. In contrast to previous reports suggesting an ion implantation induced transformation to the orthorhombic κ-phase, we show that for 28 Si + , 58 Ni + , and stoichiometric 69 Ga + / 16 O + -implantations, the monoclinic β-phase transforms to the cubic γ-phase. The γ-phase was confirmed for implantations over a range of fluences from 10 14 to 10 16 ions/cm 2 , indicating that the transformation is a general phenomenon for β-Ga 2 O 3 due to strain accumulation and/or γ-Ga 2 O 3 being energetically preferred over highly defective β-Ga 2 O 3 .