dc.date.accessioned | 2023-02-07T17:39:16Z | |
dc.date.available | 2023-02-07T17:39:16Z | |
dc.date.created | 2022-06-12T13:10:08Z | |
dc.date.issued | 2022 | |
dc.identifier.citation | Assar, Alireza Martinho, Filipe Larsen, Jes Saini, Nishant Shearer, Denver Moro, Marcos V. Stulen, Fredrik Arnesen Grini, Sigbjørn Engberg, Sara Stamate, Eugen Schou, Jørgen Vines, Lasse Canulescu, Stela Platzer-Björkman, Charlotte Hansen, Ole . Gettering in polySi/SiO xpassivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience. ACS Applied Materials & Interfaces. 2022, 14(12), 14342-14358 | |
dc.identifier.uri | http://hdl.handle.net/10852/99723 | |
dc.description.abstract | Multijunction solar cells in a tandem configuration could further lower the costs of electricity if crystalline Si (c-Si) is used as the bottom cell. However, for direct monolithic integration on c-Si, only a restricted number of top and bottom cell architectures are compatible, due to either epitaxy or high-temperature constraints, where the interface between subcells is subject to a trade-off between transmittance, electrical interconnection, and bottom cell degradation. Using polySi/SiOx passivating contacts for Si, this degradation can be largely circumvented by tuning the polySi/SiOx stacks to promote gettering of contaminants admitted into the Si bottom cell during the top cell synthesis. Applying this concept to the low-cost top cell chalcogenides Cu2ZnSnS4 (CZTS), CuGaSe2 (CGSe), and AgInGaSe2 (AIGSe), fabricated under harsh S or Se atmospheres above 550 °C, we show that increasing the heavily doped polySi layer thickness from 40 to up to 400 nm prevents a reduction in Si carrier lifetime by 1 order of magnitude, with final lifetimes above 500 μs uniformly across areas up to 20 cm2. In all cases, the increased resilience was correlated with a 99.9% reduction in contaminant concentration in the c-Si bulk, provided by the thick polySi layer, which acts as a buried gettering layer in the tandem structure without compromising the Si passivation quality. The Si resilience decreased as AIGSe > CGSe > CZTS, in accordance with the measured Cu contamination profiles and higher annealing temperatures. An efficiency of up to 7% was achieved for a CZTS/Si tandem, where the Si bottom cell is no longer the limiting factor. | |
dc.language | EN | |
dc.title | Gettering in polySi/SiO xpassivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience | |
dc.title.alternative | ENEngelskEnglishGettering in polySi/SiO xpassivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience | |
dc.type | Journal article | |
dc.creator.author | Assar, Alireza | |
dc.creator.author | Martinho, Filipe | |
dc.creator.author | Larsen, Jes | |
dc.creator.author | Saini, Nishant | |
dc.creator.author | Shearer, Denver | |
dc.creator.author | Moro, Marcos V. | |
dc.creator.author | Stulen, Fredrik Arnesen | |
dc.creator.author | Grini, Sigbjørn | |
dc.creator.author | Engberg, Sara | |
dc.creator.author | Stamate, Eugen | |
dc.creator.author | Schou, Jørgen | |
dc.creator.author | Vines, Lasse | |
dc.creator.author | Canulescu, Stela | |
dc.creator.author | Platzer-Björkman, Charlotte | |
dc.creator.author | Hansen, Ole | |
cristin.unitcode | 185,15,4,0 | |
cristin.unitname | Fysisk institutt | |
cristin.ispublished | true | |
cristin.fulltext | preprint | |
cristin.qualitycode | 1 | |
dc.identifier.cristin | 2031131 | |
dc.identifier.bibliographiccitation | info:ofi/fmt:kev:mtx:ctx&ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=ACS Applied Materials & Interfaces&rft.volume=14&rft.spage=14342&rft.date=2022 | |
dc.identifier.jtitle | ACS Applied Materials & Interfaces | |
dc.identifier.volume | 14 | |
dc.identifier.issue | 12 | |
dc.identifier.startpage | 14342 | |
dc.identifier.endpage | 14358 | |
dc.identifier.doi | https://doi.org/10.1021/acsami.2c00319 | |
dc.type.document | Tidsskriftartikkel | |
dc.source.issn | 1944-8244 | |
dc.type.version | SubmittedVersion | |
dc.relation.project | NFR/325573 | |