dc.date.accessioned | 2023-02-07T17:38:32Z | |
dc.date.available | 2023-03-15T23:46:04Z | |
dc.date.created | 2022-04-09T15:29:18Z | |
dc.date.issued | 2022 | |
dc.identifier.citation | Langørgen, Amanda Zimmermann, Christian Frodason, Ymir Kalmann Verhoeven, Espen Førdestrøm Weiser, Philip Michael Karsthof, Robert Michael Basile Varley, Joel Vines, Lasse . Influence of heat treatments in H2 and Ar on the E1 center in β-Ga2O3. Journal of Applied Physics. 2022, 131(115702) | |
dc.identifier.uri | http://hdl.handle.net/10852/99722 | |
dc.description.abstract | The influence of heat treating [Formula: see text]-type bulk [Formula: see text]-Ga[Formula: see text]O[Formula: see text] in hydrogen (H[Formula: see text]) and argon (Ar) gases on the presence of the defect level commonly labeled as [Formula: see text] was studied. Fourier transform-infrared spectroscopy confirms that hydrogen (H) is incorporated into [Formula: see text]-Ga[Formula: see text]O[Formula: see text] during H[Formula: see text] annealing at 900 °C. Deep-level transient spectroscopy measurements reveal that the concentration of the [Formula: see text] level is promoted by the introduction of H, in contrast to what is observed in samples heat-treated in an Ar flow. We further find the [Formula: see text] level to be stable against heat treatments at 650 K, both with and without an applied reverse-bias voltage. Potential candidates for the defect origin of [Formula: see text] are investigated using hybrid-functional calculations, and three types of defect complexes involving H are found to exhibit charge-state transition levels compatible with [Formula: see text], including substitutional H at one of the threefold coordinated O sites, Ga-substitutional shallow donor impurities passivated by H, and certain configurations of singly hydrogenated Ga–O divacancies. Among these types, only the latter exhibit H binding energies that are consistent with the observed thermal stability of [Formula: see text]. | |
dc.language | EN | |
dc.title | Influence of heat treatments in H2 and Ar on the E1 center in β-Ga2O3 | |
dc.title.alternative | ENEngelskEnglishInfluence of heat treatments in H2 and Ar on the E1 center in β-Ga2O3 | |
dc.type | Journal article | |
dc.creator.author | Langørgen, Amanda | |
dc.creator.author | Zimmermann, Christian | |
dc.creator.author | Frodason, Ymir Kalmann | |
dc.creator.author | Verhoeven, Espen Førdestrøm | |
dc.creator.author | Weiser, Philip Michael | |
dc.creator.author | Karsthof, Robert Michael | |
dc.creator.author | Basile Varley, Joel | |
dc.creator.author | Vines, Lasse | |
cristin.unitcode | 185,15,17,20 | |
cristin.unitname | Senter for Materialvitenskap og Nanoteknologi fysikk | |
cristin.ispublished | true | |
cristin.fulltext | original | |
cristin.qualitycode | 1 | |
dc.identifier.cristin | 2016377 | |
dc.identifier.bibliographiccitation | info:ofi/fmt:kev:mtx:ctx&ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Journal of Applied Physics&rft.volume=131&rft.spage=&rft.date=2022 | |
dc.identifier.jtitle | Journal of Applied Physics | |
dc.identifier.volume | 131 | |
dc.identifier.issue | 11 | |
dc.identifier.pagecount | 0 | |
dc.identifier.doi | https://doi.org/10.1063/5.0083861 | |
dc.type.document | Tidsskriftartikkel | |
dc.type.peerreviewed | Peer reviewed | |
dc.source.issn | 0021-8979 | |
dc.type.version | PublishedVersion | |
cristin.articleid | 115702 | |
dc.relation.project | SIGMA2/NN9136K | |
dc.relation.project | NFR/314017 | |
dc.relation.project | NFR/301740 | |
dc.relation.project | NFR/251131 | |
dc.relation.project | NFR/257639 | |
dc.relation.project | NFR/295864 | |