dc.date.accessioned | 2022-12-09T18:03:11Z | |
dc.date.available | 2022-12-09T18:03:11Z | |
dc.date.created | 2022-09-21T10:19:50Z | |
dc.date.issued | 2022 | |
dc.identifier.citation | Getz, Michael Norderhaug Povoli, Marco Monakhov, Eduard . Improving ALD-Al2O3 Surface Passivation of Si Utilizing Pre-Existing SiOx. IEEE Journal of Photovoltaics. 2022, 12(4), 929-936 | |
dc.identifier.uri | http://hdl.handle.net/10852/98056 | |
dc.description.abstract | Al 2 O 3 has rapidly become the surface passivation material of choice for p + layers of solar cells because of its high negative fixed charge, good long-term and thermal stability, and no parasitic absorption. In this article, the surface saturation current density, fixed charge, and interface state density are compared for Al 2 O 3 deposited on Si substrates where the pre-existing out-of-the-box SiO x layer was not removed, with substrates where the SiO x was removed by hydrofluoric acid. The depositions are performed by atomic layer deposition at temperatures in the 150–300 °C range, using trimethylaluminium, H 2 O, and O 3 as precursors. The samples where the native oxide was not removed achieve a higher level of surface passivation for every tested deposition temperature, with the sample deposited at 200 °C exhibiting a surface saturation current density of only 0.9 fA/cm 2 after annealing, a fixed charge of −4.2 × 10 12 cm −2 , and a density of interface states of 9.8 × 10 9 cm −2 eV −1 . Capacitance and conductance voltage characteristics reveal a strong correlation between the surface saturation current density and the density of interface states and fixed charges. It is also determined that the long-term stability of the surface passivation depends on the deposition temperature, with higher deposition temperatures resulting in improved long-term stability. The results indicate that H-terminated Si prior to Al 2 O 3 deposition may have a detrimental effect on the surface passivation. | |
dc.language | EN | |
dc.publisher | IEEE Geoscience and Remote Sensing Society | |
dc.rights | Attribution 4.0 International | |
dc.rights.uri | https://creativecommons.org/licenses/by/4.0/ | |
dc.title | Improving ALD-Al2O3 Surface Passivation of Si Utilizing Pre-Existing SiOx | |
dc.title.alternative | ENEngelskEnglishImproving ALD-Al2O3 Surface Passivation of Si Utilizing Pre-Existing SiOx | |
dc.type | Journal article | |
dc.creator.author | Getz, Michael Norderhaug | |
dc.creator.author | Povoli, Marco | |
dc.creator.author | Monakhov, Eduard | |
cristin.unitcode | 185,15,4,0 | |
cristin.unitname | Fysisk institutt | |
cristin.ispublished | true | |
cristin.fulltext | original | |
cristin.qualitycode | 1 | |
dc.identifier.cristin | 2053792 | |
dc.identifier.bibliographiccitation | info:ofi/fmt:kev:mtx:ctx&ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=IEEE Journal of Photovoltaics&rft.volume=12&rft.spage=929&rft.date=2022 | |
dc.identifier.jtitle | IEEE Journal of Photovoltaics | |
dc.identifier.volume | 12 | |
dc.identifier.issue | 4 | |
dc.identifier.startpage | 929 | |
dc.identifier.endpage | 936 | |
dc.identifier.doi | https://doi.org/10.1109/JPHOTOV.2022.3169985 | |
dc.type.document | Tidsskriftartikkel | |
dc.type.peerreviewed | Peer reviewed | |
dc.source.issn | 2156-3381 | |
dc.type.version | PublishedVersion | |
dc.relation.project | NFR/289437 | |
dc.relation.project | NFR/295864 | |