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Isotopic Enriched and Natural SiC Junction Barrier Schottky Diodes under Heavy Ion Irradiation

dc.date.accessioned2022-08-23T17:14:26Z
dc.date.available2022-08-23T17:14:26Z
dc.date.created2022-05-19T14:19:01Z
dc.date.issued2022
dc.identifier.citationRøed, Ketil Eriksen, Dag Øistein Ceccaroli, Bruno Martinella, Corinna Javanainen, Arto Reshanov, Sergey Massetti, Silvia . Isotopic Enriched and Natural SiC Junction Barrier Schottky Diodes under Heavy Ion Irradiation. IEEE Transactions on Nuclear Science. 2022
dc.identifier.urihttp://hdl.handle.net/10852/95562
dc.description.abstractThe radiation tolerance of isotopic enriched and natural silicon carbide junction barrier Schottky diodes are compared under heavy ion irradiation. Both types of devices experience leakage current degradation as well as single event burnout events. The results were comparable, although the data may indicate a marginally lower thresholds for the isotopic enriched devices at lower LET. Slightly higher reverse bias threshold values for leakage current degradation was also ob- served compared to previously published work
dc.description.abstractIsotopic Enriched and Natural SiC Junction Barrier Schottky Diodes under Heavy Ion Irradiation
dc.languageEN
dc.rightsAttribution 4.0 International
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.titleIsotopic Enriched and Natural SiC Junction Barrier Schottky Diodes under Heavy Ion Irradiation
dc.title.alternativeENEngelskEnglishIsotopic Enriched and Natural SiC Junction Barrier Schottky Diodes under Heavy Ion Irradiation
dc.typeJournal article
dc.creator.authorRøed, Ketil
dc.creator.authorEriksen, Dag Øistein
dc.creator.authorCeccaroli, Bruno
dc.creator.authorMartinella, Corinna
dc.creator.authorJavanainen, Arto
dc.creator.authorReshanov, Sergey
dc.creator.authorMassetti, Silvia
cristin.unitcode185,15,4,0
cristin.unitnameFysisk institutt
cristin.ispublishedtrue
cristin.fulltextoriginal
cristin.qualitycode1
dc.identifier.cristin2025702
dc.identifier.bibliographiccitationinfo:ofi/fmt:kev:mtx:ctx&ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=IEEE Transactions on Nuclear Science&rft.volume=&rft.spage=&rft.date=2022
dc.identifier.jtitleIEEE Transactions on Nuclear Science
dc.identifier.volume69
dc.identifier.issue7
dc.identifier.startpage1675
dc.identifier.endpage1682
dc.identifier.pagecount8
dc.identifier.doihttps://doi.org/10.1109/TNS.2022.3173061
dc.identifier.urnURN:NBN:no-98141
dc.type.documentTidsskriftartikkel
dc.type.peerreviewedPeer reviewed
dc.source.issn0018-9499
dc.identifier.fulltextFulltext https://www.duo.uio.no/bitstream/handle/10852/95562/1/Isotopic_Enriched_and_Natural_SiC_Junction_Barrier_Schottky_Diodes_Under_Heavy_Ion_Irradiation.pdf
dc.type.versionPublishedVersion
dc.relation.projectEU/ECSEL JU agreement no. 662322
dc.relation.projectESA/General Support Technology Programme (GSTP)


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