dc.date.accessioned | 2022-03-12T18:02:36Z | |
dc.date.available | 2022-03-12T18:02:36Z | |
dc.date.created | 2021-09-06T14:51:10Z | |
dc.date.issued | 2021 | |
dc.identifier.citation | Røst, Håkon Ivarssønn Reed, Benjamen P. Strand, Frode Sneve Durk, Joseph A. Evans, D. Andrew Grubišić-Čabo, Antonija Wan, Gary Cattelan, Mattia Prieto, Mauricio J. Gottlob, Daniel M. Tǎnase, Liviu C. De Souza Caldas, Lucas Schmidt, Thomas Tadich, Anton Cowie, Bruce C. C. Chellappan, Rajesh Kumar Wells, Justin William Cooil, Simon P. . A Simplified Method for Patterning Graphene on Dielectric Layers. ACS Applied Materials & Interfaces. 2021, 13(31), 37510-37516 | |
dc.identifier.uri | http://hdl.handle.net/10852/92377 | |
dc.description.abstract | The large-scale formation of patterned, quasi-freestanding graphene structures supported on a dielectric has so far been limited by the need to transfer the graphene onto a suitable substrate and contamination from the associated processing steps. We report μm scale, few-layer graphene structures formed at moderate temperatures (600–700 °C) and supported directly on an interfacial dielectric formed by oxidizing Si layers at the graphene/substrate interface. We show that the thickness of this underlying dielectric support can be tailored further by an additional Si intercalation of the graphene prior to oxidation. This produces quasi-freestanding, patterned graphene on dielectric SiO2 with a tunable thickness on demand, thus facilitating a new pathway to integrated graphene microelectronics. | |
dc.language | EN | |
dc.rights | Attribution 4.0 International | |
dc.rights.uri | https://creativecommons.org/licenses/by/4.0/ | |
dc.title | A Simplified Method for Patterning Graphene on Dielectric Layers | |
dc.type | Journal article | |
dc.creator.author | Røst, Håkon Ivarssønn | |
dc.creator.author | Reed, Benjamen P. | |
dc.creator.author | Strand, Frode Sneve | |
dc.creator.author | Durk, Joseph A. | |
dc.creator.author | Evans, D. Andrew | |
dc.creator.author | Grubišić-Čabo, Antonija | |
dc.creator.author | Wan, Gary | |
dc.creator.author | Cattelan, Mattia | |
dc.creator.author | Prieto, Mauricio J. | |
dc.creator.author | Gottlob, Daniel M. | |
dc.creator.author | Tǎnase, Liviu C. | |
dc.creator.author | De Souza Caldas, Lucas | |
dc.creator.author | Schmidt, Thomas | |
dc.creator.author | Tadich, Anton | |
dc.creator.author | Cowie, Bruce C. C. | |
dc.creator.author | Chellappan, Rajesh Kumar | |
dc.creator.author | Wells, Justin William | |
dc.creator.author | Cooil, Simon P. | |
cristin.unitcode | 185,15,4,0 | |
cristin.unitname | Fysisk institutt | |
cristin.ispublished | true | |
cristin.fulltext | original | |
cristin.qualitycode | 1 | |
dc.identifier.cristin | 1931691 | |
dc.identifier.bibliographiccitation | info:ofi/fmt:kev:mtx:ctx&ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=ACS Applied Materials & Interfaces&rft.volume=13&rft.spage=37510&rft.date=2021 | |
dc.identifier.jtitle | ACS Applied Materials & Interfaces | |
dc.identifier.volume | 13 | |
dc.identifier.issue | 31 | |
dc.identifier.startpage | 37510 | |
dc.identifier.endpage | 37516 | |
dc.identifier.doi | https://doi.org/10.1021/acsami.1c09987 | |
dc.identifier.urn | URN:NBN:no-94969 | |
dc.subject.nvi | VDP::Kondenserte fasers fysikk: 436 | |
dc.type.document | Tidsskriftartikkel | |
dc.type.peerreviewed | Peer reviewed | |
dc.source.issn | 1944-8244 | |
dc.identifier.fulltext | Fulltext https://www.duo.uio.no/bitstream/handle/10852/92377/1/acsami.1c09987.pdf | |
dc.type.version | PublishedVersion | |
dc.relation.project | NFR/250555 | |
dc.relation.project | NFR/245963 | |
dc.relation.project | NFR/262633 | |