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dc.date.accessioned2022-02-16T18:40:54Z
dc.date.available2022-02-16T18:40:54Z
dc.date.created2022-01-26T15:17:05Z
dc.date.issued2021
dc.identifier.citationDimitrievska, Mirjana Hage, Fredrik Sydow Escobar Steinvall, Simon P. Litvinchuk, Alexander Z. Stutz, Elias Ramasse, Quentin M. Fontcuberta i Morral, Anna . The Advantage of Nanowire Configuration in Band Structure Determination. Advanced Functional Materials. 2021, 31(41)
dc.identifier.urihttp://hdl.handle.net/10852/91004
dc.description.abstractEarth-abundant and environmentally friendly semiconductors offer a promising path toward low-cost mass production of solar cells. A critical aspect in exploring new semiconducting materials and demonstrating their enhanced functionality consists in disentangling them from the artifacts of defects. Nanowires are diameter-tailored filamentary structures that tend to be defect-free and thus ideal model systems for a given material. Here, an additional advantage is demostrated, which is the determination of the band structure, by performing high energy and spatial resolution electron energy-loss spectroscopy in aloof and inner beam geometry in a scanning transmission electron microscope. The experimental results are complemented by spectroscopic ellipsometry and are excellently correlated with first principles calculations. This study opens the path for characterizing the band structure of new compounds in a non-destructive and prompt manner, strengthening the route of new materials discovery.
dc.languageEN
dc.publisherWiley - VCH Verlag GmbH
dc.rightsAttribution 4.0 International
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.titleThe Advantage of Nanowire Configuration in Band Structure Determination
dc.typeJournal article
dc.creator.authorDimitrievska, Mirjana
dc.creator.authorHage, Fredrik Sydow
dc.creator.authorEscobar Steinvall, Simon
dc.creator.authorP. Litvinchuk, Alexander
dc.creator.authorZ. Stutz, Elias
dc.creator.authorRamasse, Quentin M.
dc.creator.authorFontcuberta i Morral, Anna
cristin.unitcode185,15,4,0
cristin.unitnameFysisk institutt
cristin.ispublishedtrue
cristin.fulltextpostprint
cristin.qualitycode2
dc.identifier.cristin1990625
dc.identifier.bibliographiccitationinfo:ofi/fmt:kev:mtx:ctx&ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Advanced Functional Materials&rft.volume=31&rft.spage=&rft.date=2021
dc.identifier.jtitleAdvanced Functional Materials
dc.identifier.volume31
dc.identifier.issue41
dc.identifier.doihttps://doi.org/10.1002/adfm.202105426
dc.identifier.urnURN:NBN:no-93603
dc.type.documentTidsskriftartikkel
dc.type.peerreviewedPeer reviewed
dc.source.issn1616-301X
dc.identifier.fulltextFulltext https://www.duo.uio.no/bitstream/handle/10852/91004/5/Dimitrievska.pdf
dc.type.versionPublishedVersion
cristin.articleid2105426


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