dc.date.accessioned | 2021-05-04T18:44:33Z | |
dc.date.available | 2022-04-23T22:45:54Z | |
dc.date.created | 2021-04-26T08:43:37Z | |
dc.date.issued | 2021 | |
dc.identifier.citation | Karjalainen, Antti Weiser, Philip Michael Makkonen, I. Reinertsen, Vilde Mari Vines, Lasse Tuomisto, Filip . Interplay of vacancies, hydrogen, and electrical compensation in irradiated and annealed n-type β-Ga2O3. Journal of Applied Physics. 2021, 129 | |
dc.identifier.uri | http://hdl.handle.net/10852/85944 | |
dc.description.abstract | Positron annihilation spectroscopy, Fourier transform-infrared absorption spectroscopy, and secondary ion mass spectrometry have been used to study the behavior of gallium vacancy-related defects and hydrogen in deuterium (D) implanted and subsequently annealed β-Ga2O3 single crystals. The data suggest the implantation generates a plethora of VGa-related species, including VGa1- and VGa2-type defects. The latter’s contribution to the positron signal was enhanced after an anneal at 300 ∘C, which is driven by the passivation of VibGa by hydrogen as seen from infrared measurements. Subsequent annealing near 600 ∘C returns the positron signal to levels similar to those in the as-received samples, which suggests that split VGa-like defects are still present in the sample. The almost complete removal of the VibGa-2D vibrational line, the appearance of new weak O-D lines in the same spectral region, and the lack of D out-diffusion from the samples suggest that the 600 ∘C anneal promotes the formation of either D-containing, IR-inactive complexes or defect complexes between VibGa-2D and other implantation-induced defects. The degree of electrical compensation is found to be governed by the interactions between the Ga vacancies and hydrogen. | |
dc.language | EN | |
dc.title | Interplay of vacancies, hydrogen, and electrical compensation in irradiated and annealed n-type β-Ga2O3 | |
dc.type | Journal article | |
dc.creator.author | Karjalainen, Antti | |
dc.creator.author | Weiser, Philip Michael | |
dc.creator.author | Makkonen, I. | |
dc.creator.author | Reinertsen, Vilde Mari | |
dc.creator.author | Vines, Lasse | |
dc.creator.author | Tuomisto, Filip | |
cristin.unitcode | 185,15,17,20 | |
cristin.unitname | Senter for Materialvitenskap og Nanoteknologi fysikk | |
cristin.ispublished | true | |
cristin.fulltext | original | |
cristin.qualitycode | 1 | |
dc.identifier.cristin | 1906318 | |
dc.identifier.bibliographiccitation | info:ofi/fmt:kev:mtx:ctx&ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Journal of Applied Physics&rft.volume=129&rft.spage=&rft.date=2021 | |
dc.identifier.jtitle | Journal of Applied Physics | |
dc.identifier.volume | 129 | |
dc.identifier.issue | 16 | |
dc.identifier.doi | https://doi.org/10.1063/5.0042518 | |
dc.identifier.urn | URN:NBN:no-88596 | |
dc.type.document | Tidsskriftartikkel | |
dc.type.peerreviewed | Peer reviewed | |
dc.source.issn | 0021-8979 | |
dc.identifier.fulltext | Fulltext https://www.duo.uio.no/bitstream/handle/10852/85944/1/KarjalainenA.JApplPhys.129.165702.2021_interplay%2Bof%2BV%252C%2BH%252C%2Band%2Belectrical%2Bcompensation%2Bin%2Birradiated%2Band%2Bannealed%2Bn-type%2BGa2O3.pdf | |
dc.type.version | PublishedVersion | |
cristin.articleid | 165702 | |