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dc.date.accessioned2021-01-30T20:17:03Z
dc.date.available2021-01-30T20:17:03Z
dc.date.created2020-09-30T14:55:09Z
dc.date.issued2020
dc.identifier.citationSmalc-Koziorοwska, Julita Moneta, J. Chatzopoulou, P. Vasileiadis, I.G. Bazioti, Kalliopi Prytz, Øystein Belabbas, I. Komninou, Ph. Dimitrakopulos, G.P. . The heterogeneous nucleation of threading dislocations on partial dislocations in III-nitride epilayers. Scientific Reports. 2020, 10
dc.identifier.urihttp://hdl.handle.net/10852/82750
dc.description.abstractAbstract III-nitride compound semiconductors are breakthrough materials regarding device applications. However, their heterostructures suffer from very high threading dislocation (TD) densities that impair several aspects of their performance. The physical mechanisms leading to TD nucleation in these materials are still not fully elucidated. An overlooked but apparently important mechanism is their heterogeneous nucleation on domains of basal stacking faults (BSFs). Based on experimental observations by transmission electron microscopy, we present a concise model of this phenomenon occurring in III-nitride alloy heterostructures. Such domains comprise overlapping intrinsic I 1 BSFs with parallel translation vectors. Overlapping of two BSFs annihilates most of the local elastic strain of their delimiting partial dislocations. What remains combines to yield partial dislocations that are always of screw character. As a result, TD nucleation becomes geometrically necessary, as well as energetically favorable, due to the coexistence of crystallographically equivalent prismatic facets surrounding the BSF domain. The presented model explains all observed BSF domain morphologies, and constitutes a physical mechanism that provides insight regarding dislocation nucleation in wurtzite-structured alloy epilayers.
dc.languageEN
dc.rightsAttribution 4.0 International
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.titleThe heterogeneous nucleation of threading dislocations on partial dislocations in III-nitride epilayers
dc.typeJournal article
dc.creator.authorSmalc-Koziorοwska, Julita
dc.creator.authorMoneta, J.
dc.creator.authorChatzopoulou, P.
dc.creator.authorVasileiadis, I.G.
dc.creator.authorBazioti, Kalliopi
dc.creator.authorPrytz, Øystein
dc.creator.authorBelabbas, I.
dc.creator.authorKomninou, Ph.
dc.creator.authorDimitrakopulos, G.P.
cristin.unitcode185,15,17,20
cristin.unitnameSenter for Materialvitenskap og Nanoteknologi fysikk
cristin.ispublishedtrue
cristin.fulltextoriginal
cristin.qualitycode1
dc.identifier.cristin1835711
dc.identifier.bibliographiccitationinfo:ofi/fmt:kev:mtx:ctx&ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Scientific Reports&rft.volume=10&rft.spage=&rft.date=2020
dc.identifier.jtitleScientific Reports
dc.identifier.volume10
dc.identifier.issue1
dc.identifier.doihttps://doi.org/10.1038/s41598-020-74030-y
dc.identifier.urnURN:NBN:no-85586
dc.type.documentTidsskriftartikkel
dc.type.peerreviewedPeer reviewed
dc.source.issn2045-2322
dc.identifier.fulltextFulltext https://www.duo.uio.no/bitstream/handle/10852/82750/1/smalc-koziorowska-2020-SciRep.pdf
dc.type.versionPublishedVersion
cristin.articleid17371
dc.relation.projectNFR/251131
dc.relation.projectNFR/197405


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