dc.date.accessioned | 2020-12-21T20:26:00Z | |
dc.date.available | 2020-12-21T20:26:00Z | |
dc.date.created | 2020-12-17T13:47:46Z | |
dc.date.issued | 2020 | |
dc.identifier.citation | Bathen, Marianne Etzelmüller Vines, Lasse Coutinho, José . First-principles calculations of Stark shifts of electronic transitions for defects in semiconductors: the Si vacancy in 4H-SiC. Journal of Physics: Condensed Matter. 2020, 33(7) | |
dc.identifier.uri | http://hdl.handle.net/10852/81787 | |
dc.description.abstract | Point defects in solids are promising single-photon sources with application in quantum sensing, computing and communication. Herein, we describe a theoretical framework for studying electric field effects on defect-related electronic transitions, based on density functional theory calculations with periodic boundary conditions. Sawtooth-shaped electric fields are applied perpendicular to the surface of a two-dimensional defective slab, with induced charge singularities being placed in the vacuum layer. The silicon vacancy (VSi) in 4H-SiC is employed as a benchmark system, having three zero-phonon lines in the near-infrared (V1, V1' and V2) and exhibiting Stark tunability via fabrication of Schottky barrier or p-i-n diodes. In agreement with experimental observations, we find an approximately linear field response for the zero-phonon transitions of VSi involving the decay from the first excited state (named V1 and V2). However, the magnitude of the Stark shifts are overestimated by nearly a factor of 10 when comparing to experimental findings. We discuss several theoretical and experimental aspects which could affect the agreement. | |
dc.language | EN | |
dc.rights | Attribution 4.0 International | |
dc.rights.uri | https://creativecommons.org/licenses/by/4.0/ | |
dc.title | First-principles calculations of Stark shifts of electronic transitions for defects in semiconductors: the Si vacancy in 4H-SiC | |
dc.type | Journal article | |
dc.creator.author | Bathen, Marianne Etzelmüller | |
dc.creator.author | Vines, Lasse | |
dc.creator.author | Coutinho, José | |
cristin.unitcode | 185,15,4,90 | |
cristin.unitname | Halvlederfysikk | |
cristin.ispublished | true | |
cristin.fulltext | postprint | |
cristin.qualitycode | 1 | |
dc.identifier.cristin | 1861099 | |
dc.identifier.bibliographiccitation | info:ofi/fmt:kev:mtx:ctx&ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Journal of Physics: Condensed Matter&rft.volume=33&rft.spage=&rft.date=2020 | |
dc.identifier.jtitle | Journal of Physics: Condensed Matter | |
dc.identifier.volume | 33 | |
dc.identifier.issue | 7 | |
dc.identifier.doi | https://doi.org/10.1088/1361-648X/abc804 | |
dc.identifier.urn | URN:NBN:no-84808 | |
dc.type.document | Tidsskriftartikkel | |
dc.type.peerreviewed | Peer reviewed | |
dc.source.issn | 0953-8984 | |
dc.identifier.fulltext | Fulltext https://www.duo.uio.no/bitstream/handle/10852/81787/5/Bathen_2020_J._Phys.+_Condens._Matter_33_075502.pdf | |
dc.type.version | PublishedVersion | |
cristin.articleid | 075502 | |
dc.relation.project | NFR/251131 | |
dc.relation.project | NFR/245963 | |