dc.date.accessioned | 2020-09-29T18:52:43Z | |
dc.date.available | 2020-09-29T18:52:43Z | |
dc.date.created | 2020-08-29T00:40:27Z | |
dc.date.issued | 2021 | |
dc.identifier.citation | Iordanidou, Konstantina Persson, Clas . Optoelectronic properties of coexisting InGaZnO4 structures. Materials Science in Semiconductor Processing. 2021, 121, 105297 | |
dc.identifier.uri | http://hdl.handle.net/10852/80163 | |
dc.description.abstract | Indium gallium zinc oxides (IGZO) have been developed for thin-film transistor technologies. In this work, we analyze the fundamental properties of crystalline InGaZnO4, considering all possible Ga/Zn atomic distribution patterns. Using the hybrid Hartree-Fock density functional approach, the most stable configurations are identified. The simulations reveal that the considered configurations are indirect band-gap semiconductors with highly dispersive conduction bands (CB) and very flat valence bands (VB). Thereby, the electron effective masses are light, contrary to the heavy hole effective masses. This implies a good electron mobility and suppressed hole mobility, and consequently a low off-state current that minimizes the power consumption in future InGaZnO4-based transistors. Coexistence of different configurations is not an issue for InGaZnO4 since they all present very similar optoelectronic properties. | |
dc.language | EN | |
dc.rights | Attribution-NonCommercial-NoDerivatives 4.0 International | |
dc.rights.uri | https://creativecommons.org/licenses/by-nc-nd/4.0/ | |
dc.title | Optoelectronic properties of coexisting InGaZnO4 structures | |
dc.type | Journal article | |
dc.creator.author | Iordanidou, Konstantina | |
dc.creator.author | Persson, Clas | |
cristin.unitcode | 185,15,4,0 | |
cristin.unitname | Fysisk institutt | |
cristin.ispublished | true | |
cristin.fulltext | postprint | |
cristin.qualitycode | 1 | |
dc.identifier.cristin | 1825877 | |
dc.identifier.bibliographiccitation | info:ofi/fmt:kev:mtx:ctx&ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Materials Science in Semiconductor Processing&rft.volume=121&rft.spage=105297&rft.date=2021 | |
dc.identifier.jtitle | Materials Science in Semiconductor Processing | |
dc.identifier.volume | 121 | |
dc.identifier.startpage | 105297 | |
dc.identifier.doi | https://doi.org/10.1016/j.mssp.2020.105297 | |
dc.identifier.urn | URN:NBN:no-83254 | |
dc.type.document | Tidsskriftartikkel | |
dc.type.peerreviewed | Peer reviewed | |
dc.source.issn | 1369-8001 | |
dc.identifier.fulltext | Fulltext https://www.duo.uio.no/bitstream/handle/10852/80163/4/manuscript-f.pdf | |
dc.type.version | AcceptedVersion | |
dc.relation.project | NFR/251131 | |
dc.relation.project | NOTUR/NORSTORE/NN9180K | |