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Al2O3 Layers Deposited by Atomic Layer Deposition for Surface Passivation and Passivated Contacts in High Efficiency Silicon Based Solar Cells

dc.contributor.authorJubskås, Eirik Koch
dc.date.accessioned2020-09-04T23:48:49Z
dc.date.available2020-09-04T23:48:49Z
dc.date.issued2020
dc.identifier.citationJubskås, Eirik Koch. Al2O3 Layers Deposited by Atomic Layer Deposition for Surface Passivation and Passivated Contacts in High Efficiency Silicon Based Solar Cells. Master thesis, University of Oslo, 2020
dc.identifier.urihttp://hdl.handle.net/10852/79173
dc.description.abstracteng
dc.language.isoeng
dc.subject
dc.titleAl2O3 Layers Deposited by Atomic Layer Deposition for Surface Passivation and Passivated Contacts in High Efficiency Silicon Based Solar Cellseng
dc.typeMaster thesis
dc.date.updated2020-09-05T23:46:37Z
dc.creator.authorJubskås, Eirik Koch
dc.identifier.urnURN:NBN:no-82279
dc.type.documentMasteroppgave
dc.identifier.fulltextFulltext https://www.duo.uio.no/bitstream/handle/10852/79173/1/Master-Thesis-Eirik-K-J.pdf


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