dc.date.accessioned | 2020-06-15T18:06:33Z | |
dc.date.available | 2020-06-15T18:06:33Z | |
dc.date.created | 2019-06-18T15:53:25Z | |
dc.date.issued | 2019 | |
dc.identifier.citation | Kolevatov, Ilia Svensson, Bengt Gunnar Monakhov, Eduard . Correlated annealing and formation of vacancy-hydrogen related complexes in silicon. Journal of Physics: Condensed Matter. 2019, 31(23), 1-5 | |
dc.identifier.uri | http://hdl.handle.net/10852/76953 | |
dc.description.abstract | We report on a deep level transient spectroscopy study of annealing kinetics of a deep, vacancy-hydrogen related level, labeled E5* , at 0.42 eV below the conduction band in hydrogen-implanted n-type silicon. The E5* annealing correlates with the formation of another commonly observed vacancy-hydrogen related level, labeled E5, at 0.45 eV below the conduction band. The annealing of E5* and the formation of E5 exhibit first-order kinetics with an activation energy of 1.61 ± 0.07 eV and a pre-factor of ~1013–1014 s−1 . The pre-factor indicates a dissociation or structural transformation mechanism. The analysis of electron capture cross-sections for E5* and E5 reveals considerable transition entropies for both states and a temperature dependent capture cross-section for E5* . Two possible identifications of E5* and E5 are put forward. Firstly, E5* can be attributed to V2H2(−/0) or V2H3(−/0), which dissociate with the emission of VH (E5). Secondly, E5* and E5 can be assigned to two different configurations of V3H. | en_US |
dc.language | EN | |
dc.rights | Attribution 3.0 Unported | |
dc.rights.uri | https://creativecommons.org/licenses/by/3.0/ | |
dc.title | Correlated annealing and formation of vacancy-hydrogen related complexes in silicon | en_US |
dc.type | Journal article | en_US |
dc.creator.author | Kolevatov, Ilia | |
dc.creator.author | Svensson, Bengt Gunnar | |
dc.creator.author | Monakhov, Eduard | |
cristin.unitcode | 185,15,17,0 | |
cristin.unitname | Senter for materialvitenskap og nanoteknologi | |
cristin.ispublished | true | |
cristin.fulltext | original | |
cristin.qualitycode | 1 | |
dc.identifier.cristin | 1705852 | |
dc.identifier.bibliographiccitation | info:ofi/fmt:kev:mtx:ctx&ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Journal of Physics: Condensed Matter&rft.volume=31&rft.spage=1&rft.date=2019 | |
dc.identifier.jtitle | Journal of Physics: Condensed Matter | |
dc.identifier.volume | 31 | |
dc.identifier.issue | 23 | |
dc.identifier.doi | https://doi.org/10.1088/1361-648X/ab0bf2 | |
dc.identifier.urn | URN:NBN:no-80055 | |
dc.type.document | Tidsskriftartikkel | en_US |
dc.type.peerreviewed | Peer reviewed | |
dc.source.issn | 0953-8984 | |
dc.identifier.fulltext | Fulltext https://www.duo.uio.no/bitstream/handle/10852/76953/2/Kolevatov_2019_J._Phys.__Condens._Matter_31_235703.pdf | |
dc.type.version | PublishedVersion | |
cristin.articleid | 235703 | |