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dc.date.accessioned2020-06-15T17:55:34Z
dc.date.available2020-06-15T17:55:34Z
dc.date.created2019-02-20T13:19:16Z
dc.date.issued2019
dc.identifier.citationDavid, Denis Alnoor, Hatim da Silva Santana, Victor Mancir Bargiela, Pascal Nur, Omer Willander, Magnus Baldissera, Gustavo Persson, Clas Ferreira da Silva, Antonio . Optical properties from photoelectron energy-loss spectroscopy of low-temperature aqueous chemically synthesized ZnO nanorods grown on Si. Semiconductor Science and Technology. 2019, 34, 045019
dc.identifier.urihttp://hdl.handle.net/10852/76948
dc.description.abstractThe optical properties of zinc oxide (ZnO) nanorods (NRs) synthesized by the low-temperature aqueous chemical method on top of silicon (Si) substrate have been investigated by means of photoelectron energy loss spectroscopy (PEELS). The ZnO NRs were obtained by the low temperature aqueous chemical synthesis on top of Si substrate. The measured valence band, the dynamical dielectric functions and optical absorption of the material show a reasonable agreement when the trending and shape of the theoretical calculations are considered. A first-principle calculation based on density functional theory (DFT) was performed using the partially self-consistent GW approximation (scGW0) and compared to the experimental results. The application of these two techniques brings a new analysis of the electronic properties of this material. The experimental results regarding the density of states (DOS) obtained for the valence band using x-ray photoelectron spectroscopy (XPS) was found to be consistent with the theoretical calculated value. Due to this consistency, the same wavefunctions was then employed to calculate the dielectric function of the ZnO NRs. The experimentally extracted dielectric function was also consistent with the calculated values.en_US
dc.languageEN
dc.rightsAttribution 3.0 Unported
dc.rights.urihttps://creativecommons.org/licenses/by/3.0/
dc.titleOptical properties from photoelectron energy-loss spectroscopy of low-temperature aqueous chemically synthesized ZnO nanorods grown on Sien_US
dc.typeJournal articleen_US
dc.creator.authorDavid, Denis
dc.creator.authorAlnoor, Hatim
dc.creator.authorda Silva Santana, Victor Mancir
dc.creator.authorBargiela, Pascal
dc.creator.authorNur, Omer
dc.creator.authorWillander, Magnus
dc.creator.authorBaldissera, Gustavo
dc.creator.authorPersson, Clas
dc.creator.authorFerreira da Silva, Antonio
cristin.unitcode185,15,4,40
cristin.unitnameStrukturfysikk
cristin.ispublishedtrue
cristin.fulltextoriginal
cristin.qualitycode1
dc.identifier.cristin1679174
dc.identifier.bibliographiccitationinfo:ofi/fmt:kev:mtx:ctx&ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Semiconductor Science and Technology&rft.volume=34&rft.spage=045019&rft.date=2019
dc.identifier.jtitleSemiconductor Science and Technology
dc.identifier.volume34
dc.identifier.issue4
dc.identifier.doihttps://doi.org/10.1088/1361-6641/ab0bc4
dc.identifier.urnURN:NBN:no-80062
dc.type.documentTidsskriftartikkelen_US
dc.type.peerreviewedPeer reviewed
dc.source.issn0268-1242
dc.identifier.fulltextFulltext https://www.duo.uio.no/bitstream/handle/10852/76948/1/David_2019_Semicond._Sci._Technol._34_045019.pdf
dc.type.versionPublishedVersion
cristin.articleid045019
dc.relation.projectNOTUR/NORSTORE/NN9180K


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