dc.date.accessioned | 2019-06-20T05:49:18Z | |
dc.date.available | 2019-06-20T05:49:18Z | |
dc.date.created | 2018-09-26T10:16:09Z | |
dc.date.issued | 2018 | |
dc.identifier.citation | Zimmermann, Christian Bonkerud, Julie Herklotz, Frank Sky, Thomas Neset Hupfer, Alexander Monakhov, Eduard Svensson, Bengt Gunnar Vines, Lasse . Influence of annealing atmosphere on formation of electrically-active defects in rutile TiO2. Journal of Applied Physics. 2018, 123(16), 161572-1-161572-8 | |
dc.identifier.uri | http://hdl.handle.net/10852/68450 | |
dc.description.abstract | Electronic states in the upper part of the bandgap of reduced and/or hydrogenated n-type rutile TiO2 single crystals have been studied by means of thermal admittance and deep-level transient spectroscopy measurements. The studies were performed at sample temperatures between 28 and 300 K. The results reveal limited charge carrier freeze-out even at 28 K and evidence the existence of dominant shallow donors with ionization energies below 25 meV. Interstitial atomic hydrogen is considered to be a major contributor to these shallow donors, substantiated by infrared absorption measurements. Three defect energy levels with positions of about 70 meV, 95 meV, and 120 meV below the conduction band edge occur in all the studied samples, irrespective of the sample production batch and the post-growth heat treatment used. The origin of these levels is discussed in terms of electron polarons, intrinsic point defects, and/or common residual impurities, where especially interstitial titanium atoms, oxygen vacancies, and complexes involving Al atoms appear as likely candidates. In contrast, no common deep-level defect, exhibiting a charge state transition in the 200–700 meV range below the conduction band edge, is found in different samples. This may possibly indicate a strong influence on deep-level defects by the post-growth heat treatments employed. | |
dc.language | EN | |
dc.publisher | American Institute of Physics (AIP) | |
dc.relation.ispartof | Zimmermann, Christian (2020) Revealing the Origin of electrically-active Defects in β-Ga2O3 and r-TiO2. Doctoral thesis http://hdl.handle.net/10852/77483 | |
dc.relation.uri | http://hdl.handle.net/10852/77483 | |
dc.title | Influence of annealing atmosphere on formation of electrically-active defects in rutile TiO2 | |
dc.type | Journal article | |
dc.creator.author | Zimmermann, Christian | |
dc.creator.author | Bonkerud, Julie | |
dc.creator.author | Herklotz, Frank | |
dc.creator.author | Sky, Thomas Neset | |
dc.creator.author | Hupfer, Alexander | |
dc.creator.author | Monakhov, Eduard | |
dc.creator.author | Svensson, Bengt Gunnar | |
dc.creator.author | Vines, Lasse | |
cristin.unitcode | 185,15,4,90 | |
cristin.unitname | Halvlederfysikk | |
cristin.ispublished | true | |
cristin.fulltext | original | |
cristin.qualitycode | 1 | |
dc.identifier.cristin | 1613680 | |
dc.identifier.bibliographiccitation | info:ofi/fmt:kev:mtx:ctx&ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Journal of Applied Physics&rft.volume=123&rft.spage=161572-1&rft.date=2018 | |
dc.identifier.jtitle | Journal of Applied Physics | |
dc.identifier.volume | 123 | |
dc.identifier.issue | 16 | |
dc.identifier.startpage | 161572-1 | |
dc.identifier.endpage | 161572-8 | |
dc.identifier.doi | http://dx.doi.org/10.1063/1.5011136 | |
dc.identifier.urn | URN:NBN:no-71609 | |
dc.type.document | Tidsskriftartikkel | |
dc.type.peerreviewed | Peer reviewed | |
dc.source.issn | 0021-8979 | |
dc.identifier.fulltext | Fulltext https://www.duo.uio.no/bitstream/handle/10852/68450/2/1.5011136.pdf | |
dc.type.version | PublishedVersion | |
cristin.articleid | 161572 | |
dc.relation.project | NFR/245963 | |