dc.date.accessioned | 2019-03-05T16:45:06Z | |
dc.date.available | 2019-03-05T16:45:06Z | |
dc.date.created | 2018-07-10T13:52:18Z | |
dc.date.issued | 2018 | |
dc.identifier.citation | Thøgersen, Annett Jensen, Ingvild Julie Thue Stange, Marit Synnøve Sæverud Kjeldstad, Torunn Martinez-Martinez, Diego Løvvik, Ole Martin Ulyashin, Alexander Diplas, Spyridon . Formation of nanoporous Si upon self-organized growth of Al and Si nanostructures. Nanotechnology. 2018, 29(31) | |
dc.identifier.uri | http://hdl.handle.net/10852/67070 | |
dc.description.abstract | Nanostructured materials offer unique electronic and optical properties compared to their bulk counterparts. The challenging part of the synthesis is to create a balance between the control of design, size limitations, up-scalability and contamination. In this work we show that self-organized Al nanowires in amorphous Si can be produced at room temperature by magnetron co-sputtering using two individual targets. Nanoporous Si, containing nanotunnels with dimensions within the quantum confinement regime, were then made by selective etching of Al. The material properties, film growth, and composition of the films were investigated for different compositions. In addition, the reflectance of the etched film has been measured. | en_US |
dc.language | EN | |
dc.publisher | IOP Publishing | |
dc.rights | Attribution 3.0 Unported | |
dc.rights.uri | https://creativecommons.org/licenses/by/3.0/ | |
dc.title | Formation of nanoporous Si upon self-organized growth of Al and Si nanostructures | en_US |
dc.type | Journal article | en_US |
dc.creator.author | Thøgersen, Annett | |
dc.creator.author | Jensen, Ingvild Julie Thue | |
dc.creator.author | Stange, Marit Synnøve Sæverud | |
dc.creator.author | Kjeldstad, Torunn | |
dc.creator.author | Martinez-Martinez, Diego | |
dc.creator.author | Løvvik, Ole Martin | |
dc.creator.author | Ulyashin, Alexander | |
dc.creator.author | Diplas, Spyridon | |
cristin.unitcode | 185,15,4,0 | |
cristin.unitname | Fysisk institutt | |
cristin.ispublished | true | |
cristin.fulltext | original | |
cristin.qualitycode | 2 | |
dc.identifier.cristin | 1596559 | |
dc.identifier.bibliographiccitation | info:ofi/fmt:kev:mtx:ctx&ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Nanotechnology&rft.volume=29&rft.spage=&rft.date=2018 | |
dc.identifier.jtitle | Nanotechnology | |
dc.identifier.volume | 29 | |
dc.identifier.issue | 31 | |
dc.identifier.pagecount | 6 | |
dc.identifier.doi | http://dx.doi.org/10.1088/1361-6528/aac36a | |
dc.identifier.urn | URN:NBN:no-70224 | |
dc.type.document | Tidsskriftartikkel | en_US |
dc.type.peerreviewed | Peer reviewed | |
dc.source.issn | 0957-4484 | |
dc.identifier.fulltext | Fulltext https://www.duo.uio.no/bitstream/handle/10852/67070/2/Th%25C3%25B8gersen_2018_Nanotechnology_29_315602.pdf | |
dc.type.version | PublishedVersion | |
cristin.articleid | 315602 | |
dc.relation.project | NORTEM/197405 | |
dc.relation.project | NOTUR/NORSTORE/nn2615k | |