dc.date.accessioned | 2019-01-07T13:32:51Z | |
dc.date.available | 2019-05-08T22:46:52Z | |
dc.date.created | 2018-06-03T09:02:59Z | |
dc.date.issued | 2018 | |
dc.identifier.citation | Majdi, Tahereh Pal, Souvik Hafreager, Anders Murad, Sohail Sahu, Rakesh Prasad Puri, Ishwar K . Altering thermal transport by strained-layer epitaxy. Applied Physics Letters. 2018, 112(19) | |
dc.identifier.uri | http://hdl.handle.net/10852/66047 | |
dc.description.abstract | Since strain changes the interatomic spacing of matter and alters electron and phonon dispersion, an applied strain can modify the thermal conductivity k of a material. We show how the strain induced by heteroepitaxy is a passive mechanism to change k in a thin film. Molecular dynamics simulations of the deposition and epitaxial growth of ZnTe thin films provide insights into the role of interfacial strain in the conductivity of a deposited film. ZnTe films grow strain-free on latticematched ZnTe substrates, but similar thin films grown on a lattice-mismatched CdTe substrate exhibit 6% biaxial in-plane tensile strain and 7% uniaxial out-of-plane compressive strain. In the T ¼ 700 K–1100 K temperature range, the conductivities of strained ZnTe layers decrease to 60% of their unstrained values. The resulting understanding of dk/dT shows that strain engineering can be used to alter the performance of a thermal rectifier and also provides a framework for enhancing thermoelectric devices. | en_US |
dc.language | EN | |
dc.publisher | American Institute of Physics | |
dc.title | Altering thermal transport by strained-layer epitaxy | en_US |
dc.title.alternative | ENEngelskEnglishAltering thermal transport by strained-layer epitaxy | |
dc.type | Journal article | en_US |
dc.creator.author | Majdi, Tahereh | |
dc.creator.author | Pal, Souvik | |
dc.creator.author | Hafreager, Anders | |
dc.creator.author | Murad, Sohail | |
dc.creator.author | Sahu, Rakesh Prasad | |
dc.creator.author | Puri, Ishwar K | |
cristin.unitcode | 185,15,4,10 | |
cristin.unitname | Kondenserte fasers fysikk | |
cristin.ispublished | true | |
cristin.fulltext | original | |
cristin.qualitycode | 2 | |
dc.identifier.cristin | 1588517 | |
dc.identifier.bibliographiccitation | info:ofi/fmt:kev:mtx:ctx&ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Applied Physics Letters&rft.volume=112&rft.spage=&rft.date=2018 | |
dc.identifier.jtitle | Applied Physics Letters | |
dc.identifier.volume | 112 | |
dc.identifier.issue | 19 | |
dc.identifier.doi | http://dx.doi.org/10.1063/1.5022097 | |
dc.identifier.urn | URN:NBN:no-68555 | |
dc.type.document | Tidsskriftartikkel | en_US |
dc.type.peerreviewed | Peer reviewed | |
dc.source.issn | 0003-6951 | |
dc.identifier.fulltext | Fulltext https://www.duo.uio.no/bitstream/handle/10852/66047/2/1588517.pdf | |
dc.type.version | PublishedVersion | |