dc.date.accessioned | 2018-11-13T11:34:08Z | |
dc.date.available | 2018-11-13T11:34:08Z | |
dc.date.created | 2018-06-19T12:57:05Z | |
dc.date.issued | 2018 | |
dc.identifier.citation | Beaufils, C. Redjem, W. Rousseau, E. Jacques, V. Kuznetsov, Andrej Raynaud, Christophe Voisin, C. Benali, A. Herzig, T. Pezzagna, S. Meijer, J. Abbarchi, M. Cassabois, G. . Optical properties of an ensemble of G-centers in silicon. Physical Review B. 2018, 97(3) | |
dc.identifier.uri | http://hdl.handle.net/10852/65478 | |
dc.description.abstract | We addressed the carrier dynamics in so-called G-centers in silicon (consisting of substitutional-interstitial carbon pairs interacting with interstitial silicons) obtained via ion implantation into a silicon-on-insulator wafer. We performed detailed photoluminescence experiments as a function of excitation energy, incident power, irradiation fluence, and temperature in order to study the impact of radiative and nonradiative recombination channels on the spectrum, yield, and lifetime of G-centers. In the framework of the Huang-Rhys theory with nonperturbative calculations of the acoustic phonon sidebands, we reach an estimation of 1.6 ± 0.1 A for the ˚ spatial extension of the electronic wave function in the G-center. The radiative recombination time measured at low temperature lies in the 6 ns range. The estimation of both radiative and nonradiative recombination rates as a function of temperature further demonstrates a constant radiative lifetime.
© 2018 American Physical Society | en_US |
dc.language | EN | |
dc.title | Optical properties of an ensemble of G-centers in silicon | en_US |
dc.title.alternative | ENEngelskEnglishOptical properties of an ensemble of G-centers in silicon | |
dc.type | Journal article | en_US |
dc.creator.author | Beaufils, C. | |
dc.creator.author | Redjem, W. | |
dc.creator.author | Rousseau, E. | |
dc.creator.author | Jacques, V. | |
dc.creator.author | Kuznetsov, Andrej | |
dc.creator.author | Raynaud, Christophe | |
dc.creator.author | Voisin, C. | |
dc.creator.author | Benali, A. | |
dc.creator.author | Herzig, T. | |
dc.creator.author | Pezzagna, S. | |
dc.creator.author | Meijer, J. | |
dc.creator.author | Abbarchi, M. | |
dc.creator.author | Cassabois, G. | |
cristin.unitcode | 185,15,4,90 | |
cristin.unitname | Halvlederfysikk | |
cristin.ispublished | true | |
cristin.fulltext | original | |
cristin.qualitycode | 2 | |
dc.identifier.cristin | 1592273 | |
dc.identifier.bibliographiccitation | info:ofi/fmt:kev:mtx:ctx&ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Physical Review B&rft.volume=97&rft.spage=&rft.date=2018 | |
dc.identifier.jtitle | Physical Review B | |
dc.identifier.volume | 97 | |
dc.identifier.issue | 3 | |
dc.identifier.doi | http://dx.doi.org/10.1103/PhysRevB.97.035303 | |
dc.identifier.urn | URN:NBN:no-68240 | |
dc.type.document | Tidsskriftartikkel | en_US |
dc.type.peerreviewed | Peer reviewed | |
dc.source.issn | 2469-9950 | |
dc.identifier.fulltext | Fulltext https://www.duo.uio.no/bitstream/handle/10852/65478/1/1592273.pdf | |
dc.type.version | PublishedVersion | |