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dc.date.accessioned2018-08-23T13:39:10Z
dc.date.available2018-08-23T13:39:10Z
dc.date.created2017-09-26T17:45:09Z
dc.date.issued2017
dc.identifier.citationHupfer, Alexander Bhoodoo, Chidanand Vines, Lasse Svensson, Bengt Gunnar . Formation and evolution of E3 centers in hydrothermally grown zinc oxide. Materials Science in Semiconductor Processing. 2017, 69, 13-18
dc.identifier.urihttp://hdl.handle.net/10852/63674
dc.description.abstractThe formation and evolution of the prominent and so-called E3 center in ZnO has been studied by in-situ deep level transient spectroscopy measurements after on-line implantation of hydrogen (H) and deuterium (D) ions at sample temperatures of and . The formation of E3 is shown to involve migration and subsequent trapping of interstitial hydrogen (Hi), or deuterium, and starts to occur already below 200 K. The concentration of implantation-induced E3 centers is rather unstable and decreases gradually at temperatures around 300 K by an annealing process obeying first-order kinetics. The process exhibits an activation energy of and involves presumably trapping of migrating Hi's leading to passivation of the E3 centers. A kinetics model is presented showing good agreement with the experimental data and where the E3 center is assumed to be a complex between a Zn vacancy and three hydrogen atoms . Further, the concentration of E3 centers is found to decrease rapidly during annealing in forming gas ambient at room temperature and then to recover gradually during subsequent annealing in vacuum, indicating a defect ‘core’ of the E3 center able to accommodate more than one H atom.en_US
dc.languageEN
dc.titleFormation and evolution of E3 centers in hydrothermally grown zinc oxideen_US
dc.typeJournal articleen_US
dc.creator.authorHupfer, Alexander
dc.creator.authorBhoodoo, Chidanand
dc.creator.authorVines, Lasse
dc.creator.authorSvensson, Bengt Gunnar
cristin.unitcode185,15,17,20
cristin.unitnameSenter for Materialvitenskap og Nanoteknologi fysikk
cristin.ispublishedtrue
cristin.fulltextpreprint
cristin.qualitycode1
dc.identifier.cristin1498554
dc.identifier.bibliographiccitationinfo:ofi/fmt:kev:mtx:ctx&ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Materials Science in Semiconductor Processing&rft.volume=69&rft.spage=13&rft.date=2017
dc.identifier.jtitleMaterials Science in Semiconductor Processing
dc.identifier.volume69
dc.identifier.startpage13
dc.identifier.endpage18
dc.identifier.doihttp://dx.doi.org/10.1016/j.mssp.2017.02.022
dc.identifier.urnURN:NBN:no-66207
dc.type.documentTidsskriftartikkelen_US
dc.source.issn1369-8001
dc.identifier.fulltextFulltext https://www.duo.uio.no/bitstream/handle/10852/63674/1/E3_evolution.pdf
dc.type.versionSubmittedVersion
dc.relation.projectNFR/239895
dc.relation.projectNFR/245963


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