dc.date.accessioned | 2018-08-23T13:39:10Z | |
dc.date.available | 2018-08-23T13:39:10Z | |
dc.date.created | 2017-09-26T17:45:09Z | |
dc.date.issued | 2017 | |
dc.identifier.citation | Hupfer, Alexander Bhoodoo, Chidanand Vines, Lasse Svensson, Bengt Gunnar . Formation and evolution of E3 centers in hydrothermally grown zinc oxide. Materials Science in Semiconductor Processing. 2017, 69, 13-18 | |
dc.identifier.uri | http://hdl.handle.net/10852/63674 | |
dc.description.abstract | The formation and evolution of the prominent and so-called E3 center in ZnO has been studied by in-situ deep level transient spectroscopy measurements after on-line implantation of hydrogen (H) and deuterium (D) ions at sample temperatures of and . The formation of E3 is shown to involve migration and subsequent trapping of interstitial hydrogen (Hi), or deuterium, and starts to occur already below 200 K. The concentration of implantation-induced E3 centers is rather unstable and decreases gradually at temperatures around 300 K by an annealing process obeying first-order kinetics. The process exhibits an activation energy of and involves presumably trapping of migrating Hi's leading to passivation of the E3 centers. A kinetics model is presented showing good agreement with the experimental data and where the E3 center is assumed to be a complex between a Zn vacancy and three hydrogen atoms . Further, the concentration of E3 centers is found to decrease rapidly during annealing in forming gas ambient at room temperature and then to recover gradually during subsequent annealing in vacuum, indicating a defect ‘core’ of the E3 center able to accommodate more than one H atom. | en_US |
dc.language | EN | |
dc.title | Formation and evolution of E3 centers in hydrothermally grown zinc oxide | en_US |
dc.type | Journal article | en_US |
dc.creator.author | Hupfer, Alexander | |
dc.creator.author | Bhoodoo, Chidanand | |
dc.creator.author | Vines, Lasse | |
dc.creator.author | Svensson, Bengt Gunnar | |
cristin.unitcode | 185,15,17,20 | |
cristin.unitname | Senter for Materialvitenskap og Nanoteknologi fysikk | |
cristin.ispublished | true | |
cristin.fulltext | preprint | |
cristin.qualitycode | 1 | |
dc.identifier.cristin | 1498554 | |
dc.identifier.bibliographiccitation | info:ofi/fmt:kev:mtx:ctx&ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Materials Science in Semiconductor Processing&rft.volume=69&rft.spage=13&rft.date=2017 | |
dc.identifier.jtitle | Materials Science in Semiconductor Processing | |
dc.identifier.volume | 69 | |
dc.identifier.startpage | 13 | |
dc.identifier.endpage | 18 | |
dc.identifier.doi | http://dx.doi.org/10.1016/j.mssp.2017.02.022 | |
dc.identifier.urn | URN:NBN:no-66207 | |
dc.type.document | Tidsskriftartikkel | en_US |
dc.source.issn | 1369-8001 | |
dc.identifier.fulltext | Fulltext https://www.duo.uio.no/bitstream/handle/10852/63674/1/E3_evolution.pdf | |
dc.type.version | SubmittedVersion | |
dc.relation.project | NFR/239895 | |
dc.relation.project | NFR/245963 | |