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dc.date.accessioned2017-08-16T14:56:54Z
dc.date.available2017-08-16T14:56:54Z
dc.date.created2013-01-28T14:26:16Z
dc.date.issued2013
dc.identifier.citationKnutsen, Knut Erik Johansen, Klaus Magnus H Neuvonen, Pekka Tapio Svensson, Bengt Gunnar Kuznetsov, Andrej . Diffusion and configuration of Li in ZnO. Journal of Applied Physics. 2013, 113(2)
dc.identifier.urihttp://hdl.handle.net/10852/57128
dc.description.abstractDiffusion of Li into ZnO from an “infinite” surface source under oxygen-rich conditions is studied using secondary ion mass spectrometry. The Li concentration-versus-depth profiles exhibit a distinct and sharp drop, which evolves in position with temperature and time. The sharp drop is associated with an efficient conversion from highly mobile Li-interstitials (Lii) to practically immobile Li-substitutionals (LiZn) via a kick-out mechanism. The characteristic concentration level at which Li drops provides a measure of the active donor concentration in the samples at the processing temperature, and gives evidence of residual impurities being responsible for the commonly observed “native” n-type conductivity. These donors are suggested to arise from different impurities, with Al and Si as the prevailing ones in hydrothermal and melt grown material. Further, evidence of electric field effects on Li diffusion profiles is obtained, and they are considered as a main reason for the slow diffusivity obtained in this work (using O-rich conditions) relative to those previously reported in the literature (obtained under Zn-rich conditions). This research was originally published in the Journal of Applied Physics. © AIP Publishingen_US
dc.languageEN
dc.publisherAmerican Institute of Physics (AIP)
dc.titleDiffusion and configuration of Li in ZnOen_US
dc.typeJournal articleen_US
dc.creator.authorKnutsen, Knut Erik
dc.creator.authorJohansen, Klaus Magnus H
dc.creator.authorNeuvonen, Pekka Tapio
dc.creator.authorSvensson, Bengt Gunnar
dc.creator.authorKuznetsov, Andrej
cristin.unitcode185,15,17,0
cristin.unitnameSenter for materialvitenskap og nanoteknologi
cristin.ispublishedtrue
cristin.fulltextoriginal
cristin.qualitycode2
dc.identifier.cristin998976
dc.identifier.bibliographiccitationinfo:ofi/fmt:kev:mtx:ctx&ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Journal of Applied Physics&rft.volume=113&rft.spage=&rft.date=2013
dc.identifier.jtitleJournal of Applied Physics
dc.identifier.volume113
dc.identifier.issue2
dc.identifier.doihttp://dx.doi.org/10.1063/1.4773829
dc.identifier.urnURN:NBN:no-59869
dc.type.documentTidsskriftartikkelen_US
dc.type.peerreviewedPeer reviewed
dc.source.issn0021-8979
dc.identifier.fulltextFulltext https://www.duo.uio.no/bitstream/handle/10852/57128/2/1%25252E4773829.pdf
dc.type.versionPublishedVersion


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