dc.date.accessioned | 2017-08-16T14:55:47Z | |
dc.date.available | 2017-08-16T14:55:47Z | |
dc.date.created | 2013-09-26T10:03:00Z | |
dc.date.issued | 2013 | |
dc.identifier.citation | Chan, K.-S. Vines, Lasse Johansen, Klaus Magnus H Monakhov, Edouard Ye, J.D Parkinson, P Jagadish, C Svensson, Bengt Gunnar Wong-Leung, J . Defect formation and thermal stability of H in high dose H implanted ZnO. Journal of Applied Physics. 2013, 114(8) | |
dc.identifier.uri | http://hdl.handle.net/10852/57127 | |
dc.description.abstract | We studied the structural properties, defect formation, and thermal stability of H in hydrothermally grown ZnO single crystals implanted with H- dose ranging from 2.5×1016 to 1×1017 cm−2. H implantation is found to create deformed layers with a uniaxial strain of 0.5–2.4% along the c-axis in ZnO, for the low and high dose, respectively. About 0.2–0.4% of the original implanted H concentration can still be detected in the samples by secondary ion mass spectrometry after annealing at a temperature up to 800 °C. The thermally stable H is tentatively attributed to H related defect complexes involving the substitutional H that are bound to O vacancies and/or the highly mobile interstitial H that are bound to substitutional Li occupying Zn vacancies as the samples are cooled slowly from high temperature annealing. H implantation to a dose of 1×1017 cm−2 and followed by annealing at 800 °C, is found to result in the formation of vacancy clusters that evolved into faceted voids with diameter varying from 2 to 30 nm. The truncations around the voids form more favorably on the O-terminated surface than on the Zn-terminated surface, suggesting that O is a preferred surface polarity for the internal facets of the voids in the presence of H.
This research was originally published in the Journal of Applied Physics. © AIP Publishing | en_US |
dc.language | EN | |
dc.publisher | American Institute of Physics (AIP) | |
dc.title | Defect formation and thermal stability of H in high dose H implanted ZnO | en_US |
dc.type | Journal article | en_US |
dc.creator.author | Chan, K.-S. | |
dc.creator.author | Vines, Lasse | |
dc.creator.author | Johansen, Klaus Magnus H | |
dc.creator.author | Monakhov, Edouard | |
dc.creator.author | Ye, J.D | |
dc.creator.author | Parkinson, P | |
dc.creator.author | Jagadish, C | |
dc.creator.author | Svensson, Bengt Gunnar | |
dc.creator.author | Wong-Leung, J | |
cristin.unitcode | 185,15,4,90 | |
cristin.unitname | Halvlederfysikk | |
cristin.ispublished | true | |
cristin.fulltext | original | |
cristin.qualitycode | 2 | |
dc.identifier.cristin | 1052425 | |
dc.identifier.bibliographiccitation | info:ofi/fmt:kev:mtx:ctx&ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Journal of Applied Physics&rft.volume=114&rft.spage=&rft.date=2013 | |
dc.identifier.jtitle | Journal of Applied Physics | |
dc.identifier.volume | 114 | |
dc.identifier.issue | 8 | |
dc.identifier.doi | http://dx.doi.org/10.1063/1.4819216 | |
dc.identifier.urn | URN:NBN:no-59812 | |
dc.type.document | Tidsskriftartikkel | en_US |
dc.type.peerreviewed | Peer reviewed | |
dc.source.issn | 0021-8979 | |
dc.identifier.fulltext | Fulltext https://www.duo.uio.no/bitstream/handle/10852/57127/1/1%25252E4819216.pdf | |
dc.type.version | PublishedVersion | |
cristin.articleid | 083111 | |