dc.date.accessioned | 2017-08-16T14:53:26Z | |
dc.date.available | 2017-08-16T14:53:26Z | |
dc.date.created | 2013-09-26T10:07:40Z | |
dc.date.issued | 2014 | |
dc.identifier.citation | Ayedh, Hussein Mohammed Hussein Bobal, Viktor Nipoti, R Hallen, Anders Svensson, Bengt Gunnar . Formation of carbon vacancy in 4H Silicon Carbide during high-temperature processing. Journal of Applied Physics. 2014, 115(1) | |
dc.identifier.uri | http://hdl.handle.net/10852/57125 | |
dc.description.abstract | As-grown and pre-oxidized silicon carbide (SiC) samples of polytype 4H have been annealed at temperatures up to 1950 °C for 10 min duration using inductive heating, or at 2000 °C for 30 s using microwave heating. The samples consisted of a n-type high-purity epitaxial layer grown on 4° off-axis ⟨0001⟩ n+-substrate and the evolution of the carbon vacancy (VC) concentration in the epitaxial layer was monitored by deep level transient spectroscopy via the characteristic Z1/2 peak. Z1/2 appears at ∼0.7 eV below the conduction band edge and arises from the doubly negative charge state of VC. The concentration of VC increases strongly after treatment at temperatures ≥ 1600 °C and it reaches almost 1015 cm−3 after the inductive heating at 1950 °C. A formation enthalpy of ∼5.0 eV is deduced for VC, in close agreement with recent theoretical predictions in the literature, and the entropy factor is found to be ∼5 k (k denotes Boltzmann's constant). The latter value indicates substantial lattice relaxation around VC, consistent with VC being a negative-U system exhibiting considerable Jahn-Teller distortion. The microwave heated samples show evidence of non-equilibrium conditions due to the short duration used and display a lower content of VC than the inductively heated ones. Finally, concentration-versus-depth profiles of VC favour formation in the “bulk” of the epitaxial layer as the prevailing process and not a Schottky type process at the surface.
This research was originally published in the Journal of Applied Physics. © AIP Publishing | en_US |
dc.language | EN | |
dc.publisher | American Institute of Physics (AIP) | |
dc.title | Formation of carbon vacancy in 4H Silicon Carbide during high-temperature processing | en_US |
dc.type | Journal article | en_US |
dc.creator.author | Ayedh, Hussein Mohammed Hussein | |
dc.creator.author | Bobal, Viktor | |
dc.creator.author | Nipoti, R | |
dc.creator.author | Hallen, Anders | |
dc.creator.author | Svensson, Bengt Gunnar | |
cristin.unitcode | 185,15,4,0 | |
cristin.unitname | Fysisk institutt | |
cristin.ispublished | true | |
cristin.fulltext | original | |
cristin.qualitycode | 2 | |
dc.identifier.cristin | 1052431 | |
dc.identifier.bibliographiccitation | info:ofi/fmt:kev:mtx:ctx&ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Journal of Applied Physics&rft.volume=115&rft.spage=&rft.date=2014 | |
dc.identifier.jtitle | Journal of Applied Physics | |
dc.identifier.volume | 115 | |
dc.identifier.issue | 1 | |
dc.identifier.doi | http://dx.doi.org/10.1063/1.4837996 | |
dc.identifier.urn | URN:NBN:no-59810 | |
dc.type.document | Tidsskriftartikkel | en_US |
dc.type.peerreviewed | Peer reviewed | |
dc.source.issn | 0021-8979 | |
dc.identifier.fulltext | Fulltext https://www.duo.uio.no/bitstream/handle/10852/57125/1/1%25252E4837996.pdf | |
dc.type.version | PublishedVersion | |