dc.date.accessioned | 2017-08-16T14:23:08Z | |
dc.date.available | 2017-08-16T14:23:08Z | |
dc.date.created | 2008-04-24T16:36:44Z | |
dc.date.issued | 2008 | |
dc.identifier.citation | Børseth, Thomas J. Moe Tuomisto, F Christensen, Jens S. Monakhov, Edouard Svensson, Bengt Gunnar Kuznetsov, Andrej . Vacancy clustering and acceptor activation in nitrogen-implanted ZnO. Physical Review B. Condensed Matter and Materials Physics. 2008, 77 | |
dc.identifier.uri | http://hdl.handle.net/10852/57111 | |
dc.description.abstract | The role of vacancy clustering and acceptor activation on resistivity evolution in N ion-implanted n-type hydrothermally grown bulk ZnO has been investigated by positron annihilation spectroscopy, resistivity measurements, and chemical profiling. Room temperature 220keV N implantation using doses in the low 1015cm−2 range induces small and big vacancy clusters containing at least 2 and 3–4 Zn vacancies, respectively. The small clusters are present already in as-implanted samples and remain stable up to 1000°C with no significant effect on the resistivity evolution. In contrast, formation of the big clusters at 600°C is associated with a significant increase in the free electron concentration attributed to gettering of amphoteric Li impurities by these clusters. Further annealing at 800°C results in a dramatic decrease in the free electron concentration correlated with activation of 1016–1017cm−3 acceptors likely to be N and/or Li related. The samples remain n type, however, and further annealing at 1000°C results in passivation of the acceptor states while the big clusters dissociate.
© 2008 American Physical Society | en_US |
dc.language | EN | |
dc.publisher | American Physical Society | |
dc.title | Vacancy clustering and acceptor activation in nitrogen-implanted ZnO | en_US |
dc.type | Journal article | en_US |
dc.creator.author | Børseth, Thomas J. Moe | |
dc.creator.author | Tuomisto, F | |
dc.creator.author | Christensen, Jens S. | |
dc.creator.author | Monakhov, Edouard | |
dc.creator.author | Svensson, Bengt Gunnar | |
dc.creator.author | Kuznetsov, Andrej | |
cristin.unitcode | 185,15,4,0 | |
cristin.unitname | Fysisk institutt | |
cristin.ispublished | true | |
cristin.fulltext | original | |
cristin.qualitycode | 2 | |
dc.identifier.cristin | 363189 | |
dc.identifier.bibliographiccitation | info:ofi/fmt:kev:mtx:ctx&ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Physical Review B. Condensed Matter and Materials Physics&rft.volume=77&rft.spage=&rft.date=2008 | |
dc.identifier.jtitle | Physical Review B. Condensed Matter and Materials Physics | |
dc.identifier.volume | 77 | |
dc.identifier.doi | http://dx.doi.org/10.1103/PhysRevB.77.045204 | |
dc.identifier.urn | URN:NBN:no-59823 | |
dc.type.document | Tidsskriftartikkel | en_US |
dc.type.peerreviewed | Peer reviewed | |
dc.source.issn | 1098-0121 | |
dc.identifier.fulltext | Fulltext https://www.duo.uio.no/bitstream/handle/10852/57111/1/PhysRevB.77.045204.pdf | |
dc.type.version | PublishedVersion | |