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Vacancy defect and defect cluster energetics in ion-implanted ZnO

dc.date.accessioned2017-08-16T14:12:22Z
dc.date.available2017-08-16T14:12:22Z
dc.date.created2010-10-11T09:38:35Z
dc.date.issued2010
dc.identifier.citationDong, Yufeng Tuomisto, F Svensson, Bengt Gunnar Kuznetsov, Andrej Brillson, Leonard J. . Vacancy defect and defect cluster energetics in ion-implanted ZnO. Physical Review B. Condensed Matter and Materials Physics. 2010, 81(8)
dc.identifier.urihttp://hdl.handle.net/10852/57108
dc.description.abstractWe have used depth-resolved cathodoluminescence, positron annihilation, and surface photovoltage spectroscopies to determine the energy levels of Zn vacancies and vacancy clusters in bulk ZnO crystals. Doppler broadening-measured transformation of Zn vacancies to vacancy clusters with annealing shifts defect energies significantly lower in the ZnO band gap. Zn and corresponding O vacancy-related depth distributions provide a consistent explanation of depth-dependent resistivity and carrier-concentration changes induced by ion implantation. © 2010 American Physical Societyen_US
dc.languageEN
dc.publisherAmerican Physical Society
dc.titleVacancy defect and defect cluster energetics in ion-implanted ZnOen_US
dc.typeJournal articleen_US
dc.creator.authorDong, Yufeng
dc.creator.authorTuomisto, F
dc.creator.authorSvensson, Bengt Gunnar
dc.creator.authorKuznetsov, Andrej
dc.creator.authorBrillson, Leonard J.
cristin.unitcode185,15,4,0
cristin.unitnameFysisk institutt
cristin.ispublishedtrue
cristin.fulltextoriginal
cristin.qualitycode2
dc.identifier.cristin350165
dc.identifier.bibliographiccitationinfo:ofi/fmt:kev:mtx:ctx&ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Physical Review B. Condensed Matter and Materials Physics&rft.volume=81&rft.spage=&rft.date=2010
dc.identifier.jtitlePhysical Review B. Condensed Matter and Materials Physics
dc.identifier.volume81
dc.identifier.issue8
dc.identifier.pagecount4
dc.identifier.doihttp://dx.doi.org/10.1103/PhysRevB.81.081201
dc.identifier.urnURN:NBN:no-59827
dc.type.documentTidsskriftartikkelen_US
dc.type.peerreviewedPeer reviewed
dc.source.issn1098-0121
dc.identifier.fulltextFulltext https://www.duo.uio.no/bitstream/handle/10852/57108/2/PhysRevB.81.081201.pdf
dc.type.versionPublishedVersion


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