dc.date.accessioned | 2017-08-16T14:03:12Z | |
dc.date.available | 2017-08-16T14:03:12Z | |
dc.date.created | 2012-12-28T15:18:14Z | |
dc.date.issued | 2012 | |
dc.identifier.citation | Løvlie, Lars Sundnes Svensson, Bengt Gunnar . Oxidation-enhanced annealing of implantation-induced Z(1/2) centers in 4H-SiC: Reaction kinetics and modeling. Physical Review B. Condensed Matter and Materials Physics. 2012, 86(7) | |
dc.identifier.uri | http://hdl.handle.net/10852/57103 | |
dc.description.abstract | High-purity epitaxial layers of n-type 4H-SiC have been implanted with 4.3-MeV Si ions to a dose of 3 × 108 cm−2 and then subjected to dry isothermal oxidation at temperatures between 1050 and 1175 °C. Analysis of the samples by depth-resolved deep level transient spectroscopy unveils a strong oxidation-enhanced annealing of the prominent Z1/2 center, commonly ascribed to the carbon vacancy. The integrated (total) loss of Z1/2 centers is proportional to the thickness of the silicon dioxide (SiO2) layer grown but the proportionality constant, or annihilation efficiency, decreases with decreasing oxidation temperature. At a given depth x, the annealing of Z1/2 obeys first-order kinetics with a rate constant c having an activation energy of ∼5.3 eV. The pre-exponential factor c decreases with increasing x and a normalized concentration-versus-depth distribution of the species injected from the surface and annihilating the Z1/2 centers has been deducted. This species is believed to be the carbon interstitial and is labeled CI: numerical simulations of the reaction kinetics employing a model where (i) the generation rate of CI at the SiO2/SiC interface is related to the oxidation rate, (ii) the diffusion of CI into the SiC layer is fast, and (iii) a steady-state concentration profile of CI is rapidly established, yield good agreement with the experimental data for the evolution of both Z1/2 (absolute values) and CI (relative values) with temperature, depth, and time. The activation energy obtained for the diffusivity of CI is ∼3.0 eV, presumably reflecting the migration barrier for CI and possibly some contribution from an extra barrier to be surmounted at the SiO2/SiC interface.
© 2012 American Physical Society | en_US |
dc.language | EN | |
dc.publisher | American Physical Society | |
dc.title | Oxidation-enhanced annealing of implantation-induced Z(1/2) centers in 4H-SiC: Reaction kinetics and modeling | en_US |
dc.type | Journal article | en_US |
dc.creator.author | Løvlie, Lars Sundnes | |
dc.creator.author | Svensson, Bengt Gunnar | |
cristin.unitcode | 185,15,17,0 | |
cristin.unitname | Senter for materialvitenskap og nanoteknologi | |
cristin.ispublished | true | |
cristin.fulltext | original | |
cristin.qualitycode | 2 | |
dc.identifier.cristin | 978148 | |
dc.identifier.bibliographiccitation | info:ofi/fmt:kev:mtx:ctx&ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Physical Review B. Condensed Matter and Materials Physics&rft.volume=86&rft.spage=&rft.date=2012 | |
dc.identifier.jtitle | Physical Review B. Condensed Matter and Materials Physics | |
dc.identifier.volume | 86 | |
dc.identifier.issue | 7 | |
dc.identifier.pagecount | 8 | |
dc.identifier.doi | http://dx.doi.org/10.1103/PhysRevB.86.075205 | |
dc.identifier.urn | URN:NBN:no-59841 | |
dc.type.document | Tidsskriftartikkel | en_US |
dc.type.peerreviewed | Peer reviewed | |
dc.source.issn | 1098-0121 | |
dc.identifier.fulltext | Fulltext https://www.duo.uio.no/bitstream/handle/10852/57103/1/PhysRevB.86.075205.pdf | |
dc.type.version | PublishedVersion | |