Acceptor-like deep level defects in ion-implanted ZnO

Abstract

N-type ZnO samples have been implanted with MeV Zn+ ions at room temperature to doses between 1×108 and 2×1010cm−2, and the defect evolution has been studied by capacitance-voltage and deep level transient spectroscopy measurements. The results show a dose dependent compensation by acceptor-like defects along the implantation depth profile, and at least four ion-induced deep-level defects arise, where two levels with energy positions of 1.06 and 1.2 eV below the conduction band increase linearly with ion dose and are attributed to intrinsic defects. Moreover, a re-distribution of defects as a function of depth is observed already at temperatures below 400 K. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.