Browsing Det matematisk-naturvitenskapelige fakultet by Author "Von Wenckstern, Holger"

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  • Cation segregation observed in an (In,Ga) 2 O3 material thin film library beyond the miscibility limit of the bixbyite structure 
    Montag, S.; Splith, D.; Kneiß, M.; Grundmann, M.; Garcia Fernandez, Javier; Prytz, Øystein; Von Wenckstern, Holger (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2023)
    Structural, morphological, and optical properties of (In1−xGax)2O3 thin films are reported as a function of the cation composition. A material library with 0.1≤x≤0.64 was fabricated by discrete combinatorial synthesis on ...
  • Defect level in κ-Ga2O3 revealed by thermal admittance spectroscopy 
    Langørgen, Amanda; Frodason, Ymir Kalmann; Karsthof, Robert Michael; Von Wenckstern, Holger; Jensen, Ingvild Julie Thue; Vines, Lasse; Grundmann, Marius (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2023)
    Defects in pulsed-laser deposition grown have been investigated using thermal admittance spectroscopy and secondary ion mass spectrometry (SIMS). A film was grown on either a tin-doped indium oxide or an aluminum-doped ...
  • Origin of enhanced conductivity in low dose ion irradiated oxides 
    Borgersen, Jon; Karsthof, Robert Michael; Rønning, Vegard; Vines, Lasse; Von Wenckstern, Holger; Grundmann, Marius; Kuznetsov, Andrej Yu.; Johansen, Klaus Magnus Håland (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2023)
    Significant resistivity variations have previously been observed in oxides subjected to relatively low ion irradiation doses, nominally insufficient to generate the amount of bulk defects needed to explain the phenomena. ...