Browsing Det matematisk-naturvitenskapelige fakultet by Author "Vines, Lasse"

Now showing items 1-20 of 81

  • Activation energy of silicon diffusion in gallium oxide: Roles of the mediating defects charge states and phase modification 
    Azarov, Alexander; Venkatachalapathy, Vishnukanthan; Vines, Lasse; Monakhov, Eduard; Lee, In-Hwan; Kuznetsov, Andrej (Journal article / Tidsskriftartikkel / AcceptedVersion; Peer reviewed, 2021)
    Silicon (Si) is an efficient n-type dopant in gallium oxide (Ga2O3)—an ultra-wide bandgap semiconductor promising in a number of applications. However, in spite of the technological importance for device fabrication, the ...
  • Al Implantation in SiC; Where Will the Ions Come to Rest? 
    Linnarsson, Margareta; Vines, Lasse; Hallen, Anders (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2023)
    In all implantations into crystalline targets, quite a few ions find a path along a crystal channel or plane, so called channeling, and these ions travel deep into the crystal. This paper treats aluminum (Al) implantation ...
  • Anisotropic and plane-selective migration of the carbon vacancy in SiC: Theory and experiment 
    Bathen, Marianne Etzelmüller; Coutinho, José; Ayedh, Hussein Mohammed Hussein; Hassan, Jawad U; Farkas, Ildiko; Öberg, Sven; Frodason, Ymir Kalmann; Svensson, Bengt Gunnar; Vines, Lasse (Journal article / Tidsskriftartikkel / AcceptedVersion; Peer reviewed, 2019)
    We investigate the migration mechanism of the carbon vacancy (VC) in silicon carbide (SiC) using a combination of theoretical and experimental methodologies. The VC, commonly present even in state-of-the-art epitaxial SiC ...
  • Anisotropic and trap-limited diffusion of hydrogen/deuterium in monoclinic gallium oxide single crystals 
    Reinertsen, Vilde Mari; Weiser, Philip Michael; Frodason, Ymir Kalmann; Bathen, Marianne Etzelmüller; Vines, Lasse; Johansen, Klaus Magnus H (Journal article / Tidsskriftartikkel / AcceptedVersion; Peer reviewed, 2020)
    The effect of lattice anisotropy on the diffusion of hydrogen (H)/deuterium (2H) in β-Ga2O3 was investigated using secondary ion mass spectrometry (SIMS) and hybrid-functional calculations. Concentration-depth profiles of ...
  • Broad luminescence from donor-complexed LiZn and NaZn acceptors in ZnO 
    Frodason, Ymir Kalmann; Johansen, Klaus Magnus H; Galeckas, Augustinas; Vines, Lasse (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2019)
    Zn substitutional lithium ( Li Zn ) and sodium ( Na Zn ) acceptors and their complexes with common donor impurities ( Al Zn , Hi, and HO) in ZnO have been studied using hybrid functional calculations. The results show ...
  • Characteristics of ZnON films and heterojunction diodes with varying O:N ratios 
    Saxegaard, Kjetil Karlsen; Vines, Lasse; Monakhov, Eduard; Bergum, Kristin (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2023)
    Zinc Oxynitride (ZnOxNy) thin films display high mobilities and a considerable tunability of both the free electron concentration and optical band gap. The properties achievable for this material system makes ZnOxNy an ...
  • Charge State Control Over Point Defects in SiC Devices 
    Bathen, Marianne Etzelmüller; Selnesaunet, Gard Momrak; Enga, Marius; Kjeldby, Snorre B.; Müting, Johanna; Vines, Lasse; Grossner, Ulrike (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2023)
    Point defects in silicon carbide (SiC) are well positioned for integration with SiC based quantum photonic devices due to the maturity of SiC material and fabrication technology, the plethora of candidate quantum emitters ...
  • Combining steady-state photo-capacitance spectra with first-principles calculations: the case of Fe and Ti in β-Ga2O3 
    Zimmermann, Christian; Frodason, Ymir Kalmann; Rønning, Vegard; Varley, Joel B; Vines, Lasse (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2020)
  • Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC 
    Karsthof, Robert Michael; Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Vines, Lasse (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2020)
    The development of defect populations after proton irradiation of n-type 4H-SiC and subsequent annealing experiments is studied by means of deep level transient (DLTS) and photoluminescence spectroscopy. A comprehensive ...
  • Cross-sectional carrier lifetime profiling and deep level monitoring in silicon carbide films exhibiting variable carbon vacancy concentrations 
    Galeckas, Augustinas; Karsthof, Robert Michael; Gana, Kingsly; Kok, Angela; Bathen, Marianne Etzelmüller; Vines, Lasse; Kuznetsov, Andrej (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2022)
    The carrier lifetime control over 150 μm thick 4H-SiC epitaxial layers via thermal generation and annihilation of carbon vacancy (VC) related Z1/2 lifetime killer sites is reported. The defect developments upon typical SiC ...
  • Defect annealing kinetics in ZnO implanted with Zn substituting elements: Zn interstitials and Li redistribution 
    Azarov, Alexander; Aarseth, Bjørn Lupton; Vines, Lasse; Hallen, Anders; Monakhov, Eduard; Kuznetsov, Andrej (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2019)
    It is known that the behavior of residual Li in ion implanted ZnO depends on the preferential localization of the implants, in particular, forming characteristic Li depleted or Li pile-up regions for Zn or O sublattice ...
  • Defect formation and thermal stability of H in high dose H implanted ZnO 
    Chan, K.-S.; Vines, Lasse; Johansen, Klaus Magnus H; Monakhov, Edouard; Ye, J.D; Parkinson, P; Jagadish, C; Svensson, Bengt Gunnar; Wong-Leung, J (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2013)
    We studied the structural properties, defect formation, and thermal stability of H in hydrothermally grown ZnO single crystals implanted with H- dose ranging from 2.5×1016 to 1×1017 cm−2. H implantation is found to create ...
  • Defect level in κ-Ga2O3 revealed by thermal admittance spectroscopy 
    Langørgen, Amanda; Frodason, Ymir Kalmann; Karsthof, Robert Michael; Von Wenckstern, Holger; Jensen, Ingvild Julie Thue; Vines, Lasse; Grundmann, Marius (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2023)
    Defects in pulsed-laser deposition grown have been investigated using thermal admittance spectroscopy and secondary ion mass spectrometry (SIMS). A film was grown on either a tin-doped indium oxide or an aluminum-doped ...
  • Defects in semiconductors 
    Vines, Lasse; Monakhov, Eduard; Kuznetsov, Andrej (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2022)
  • Diffusion of indium in single crystal zinc oxide: a comparison between group III donors 
    Sky, Thomas Neset; Johansen, Klaus Magnus H; Frodason, Ymir Kalmann; Aarholt, Thomas; Riise, Heine Nygard; Prytz, Øystein; Svensson, Bengt Gunnar; Vines, Lasse (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2019)
  • Diffusion of Sn donors in β-Ga2O3 
    Frodason, Ymir Kalmann; Krzyzaniak, Patryk Piotr; Vines, Lasse; Varley, Joel Basile; Van De Walle, Chris G.; Johansen, Klaus Magnus H (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2023)
    Diffusion of the n-type dopant Sn in β-Ga2O3 is studied using secondary-ion mass spectrometry combined with hybrid functional calculations. The diffusion of Sn from a Sn-doped bulk substrate with surface orientation (001) ...
  • Donors and polaronic absorption in rutile TiO2 single crystals 
    Weiser, Philip Michael; Zimmermann, Christian; Bonkerud, Julie; Vines, Lasse; Monakhov, Eduard (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2020)
    We have used a combination of optical absorption and electrical conductivity measurements to study the effect of the main donor on small polarons in rutile TiO2 single crystals rendered n-type conductive by hydrogenation ...
  • Dual configuration of shallow acceptor levels in 4H-SiC 
    Bathen, Marianne Etzelmüller; Kumar, Piyush; Ghezellou, Misagh; Belanche, Manuel; Vines, Lasse; Ul-Hassan, Jawad; Grossner, Ulrike (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2024)
    Acceptor dopants in 4H-SiC exhibit energy levels that are located deeper in the band gap than the thermal energy at room temperature (RT), resulting in incomplete ionization at RT. Therefore, a comprehensive understanding ...
  • Dynamic Impurity Redistributions in Kesterite Absorbers 
    Grini, Sigbjørn; Aboulfadl, Hisham; Ross, Nils; Persson, Clas; Platzer-Björkman, Charlotte; Thuvander, Mattias; Vines, Lasse (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2020)
    Cu2ZnSn(S,Se)4 is a promising nontoxic earth‐abundant solar cell absorber. To optimize the thin films for solar cell device performance, postdeposition treatments at temperatures below the crystallization temperature are ...
  • Effects of Substrate and Post-Deposition Annealing on Structural and Optical Properties of (ZnO)1-x(GaN)x Films 
    Olsen, Vegard Skiftestad; Bazioti, Kalliopi; Baldissera, Gustavo; Azarov, Alexander; Prytz, Øystein; Persson, Clas; Svensson, Bengt Gunnar; Kuznetsov, Andrej; Vines, Lasse (Journal article / Tidsskriftartikkel / AcceptedVersion; Peer reviewed, 2019)
    The structural and optical properties of magnetron sputtered thin films of (ZnO)1−x(GaN)x deposited on zinc oxide, sapphire, and silicon oxide are studied as a function of strain accumulation and post‐deposition anneals ...