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  • Bathen, Marianne Etzelmüller; Kumar, Piyush; Ghezellou, Misagh; Belanche, Manuel; Vines, Lasse; Ul-Hassan, Jawad; Grossner, Ulrike (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2024)
    Acceptor dopants in 4H-SiC exhibit energy levels that are located deeper in the band gap than the thermal energy at room temperature (RT), resulting in incomplete ionization at RT. Therefore, a comprehensive understanding ...