Browsing Det matematisk-naturvitenskapelige fakultet by Author "Svensson, Bengt Gunnar"

Now showing items 1-20 of 24

  • Anisotropic and plane-selective migration of the carbon vacancy in SiC: Theory and experiment 
    Bathen, Marianne Etzelmüller; Coutinho, José; Ayedh, Hussein Mohammed Hussein; Hassan, Jawad U; Farkas, Ildiko; Öberg, Sven; Frodason, Ymir Kalmann; Svensson, Bengt Gunnar; Vines, Lasse (Journal article / Tidsskriftartikkel / AcceptedVersion; Peer reviewed, 2019)
    We investigate the migration mechanism of the carbon vacancy (VC) in silicon carbide (SiC) using a combination of theoretical and experimental methodologies. The VC, commonly present even in state-of-the-art epitaxial SiC ...
  • Correlated annealing and formation of vacancy-hydrogen related complexes in silicon 
    Kolevatov, Ilia; Svensson, Bengt Gunnar; Monakhov, Eduard (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2019)
    We report on a deep level transient spectroscopy study of annealing kinetics of a deep, vacancy-hydrogen related level, labeled E5* , at 0.42 eV below the conduction band in hydrogen-implanted n-type silicon. The E5* ...
  • Defect formation and thermal stability of H in high dose H implanted ZnO 
    Chan, K.-S.; Vines, Lasse; Johansen, Klaus Magnus H; Monakhov, Edouard; Ye, J.D; Parkinson, P; Jagadish, C; Svensson, Bengt Gunnar; Wong-Leung, J (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2013)
    We studied the structural properties, defect formation, and thermal stability of H in hydrothermally grown ZnO single crystals implanted with H- dose ranging from 2.5×1016 to 1×1017 cm−2. H implantation is found to create ...
  • Diffusion and configuration of Li in ZnO 
    Knutsen, Knut Erik; Johansen, Klaus Magnus H; Neuvonen, Pekka Tapio; Svensson, Bengt Gunnar; Kuznetsov, Andrej (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2013)
    Diffusion of Li into ZnO from an “infinite” surface source under oxygen-rich conditions is studied using secondary ion mass spectrometry. The Li concentration-versus-depth profiles exhibit a distinct and sharp drop, which ...
  • Diffusion of indium in single crystal zinc oxide: a comparison between group III donors 
    Sky, Thomas Neset; Johansen, Klaus Magnus H; Frodason, Ymir Kalmann; Aarholt, Thomas; Riise, Heine Nygard; Prytz, Øystein; Svensson, Bengt Gunnar; Vines, Lasse (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2019)
  • Effects of Substrate and Post-Deposition Annealing on Structural and Optical Properties of (ZnO)1-x(GaN)x Films 
    Olsen, Vegard Skiftestad; Bazioti, Kalliopi; Baldissera, Gustavo; Azarov, Alexander; Prytz, Øystein; Persson, Clas; Svensson, Bengt Gunnar; Kuznetsov, Andrej; Vines, Lasse (Journal article / Tidsskriftartikkel / AcceptedVersion; Peer reviewed, 2019)
    The structural and optical properties of magnetron sputtered thin films of (ZnO)1−x(GaN)x deposited on zinc oxide, sapphire, and silicon oxide are studied as a function of strain accumulation and post‐deposition anneals ...
  • Formation of carbon vacancy in 4H Silicon Carbide during high-temperature processing 
    Ayedh, Hussein Mohammed Hussein; Bobal, Viktor; Nipoti, R; Hallen, Anders; Svensson, Bengt Gunnar (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2014)
    As-grown and pre-oxidized silicon carbide (SiC) samples of polytype 4H have been annealed at temperatures up to 1950 °C for 10 min duration using inductive heating, or at 2000 °C for 30 s using microwave heating. The samples ...
  • H passivation of Li on Zn-site in ZnO: Positron annihilation spectroscopy and secondary ion mass spectrometry 
    Johansen, Klaus Magnus H; Zubiaga, Asier; Tuomisto, Filip; Monakhov, Edouard; Kuznetsov, Andrej; Svensson, Bengt Gunnar (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2011)
    The interaction of hydrogen (H) with lithium (Li) and zinc vacancies (VZn) in hydrothermally grown n-type zinc oxide (ZnO) has been investigated by positron annihilation spectroscopy (PAS) and secondary ion mass spectrometry. ...
  • Impact of post annealing and hydrogen implantation on functional properties of Cu2O thin films for photovoltaic applications 
    Kumar, Raj; Bergum, Kristin; Riise, Heine Nygard; Monakhov, Eduard; Galeckas, Augustinas; Svensson, Bengt Gunnar (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2020)
    Polycrystalline cuprous oxide (Cu2O) thin films were sputtered, annealed (900 °C rapid thermal annealing) and subsequently implanted with various hydrogen ion (H+) doses from 5E13 to 2E15 cm−2 with a low acceleration energy ...
  • Impact of proton irradiation on conductivity and deep level defects in β-Ga2O3 
    Ingebrigtsen, Mads Eide; Kuznetsov, Andrej; Svensson, Bengt Gunnar; Alfieri, Giovanni; Mihaila, Andrei; Badstübner, U.; Perron, A; Vines, Lasse; Varley, Joel B (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2019)
    Single crystalline bulk and epitaxially grown gallium oxide (β–Ga2O3) was irradiated by 0.6 and 1.9 MeV protons to doses ranging from 5 × 109 to 6 × 1014 cm−2 in order to study the impact on charge carrier concentration ...
  • Influence of annealing atmosphere on formation of electrically-active defects in rutile TiO2 
    Zimmermann, Christian; Bonkerud, Julie; Herklotz, Frank; Sky, Thomas Neset; Hupfer, Alexander; Monakhov, Eduard; Svensson, Bengt Gunnar; Vines, Lasse (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2018)
    Electronic states in the upper part of the bandgap of reduced and/or hydrogenated n-type rutile TiO2 single crystals have been studied by means of thermal admittance and deep-level transient spectroscopy measurements. The ...
  • Influence of Fermi level position on vacancy-assisted diffusion of aluminum in zinc oxide 
    Sky, Thomas Neset; Johansen, Klaus Magnus H; Venkatachalapathy, Vishnukanthan; Svensson, Bengt Gunnar; Tuomisto, Filip; Vines, Lasse (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2018)
    The influence of Fermi level position and annealing ambient on the zinc vacancy VZn generation and Al diffusion is studied in monocrystalline zinc oxide (ZnO). From secondary-ion mass spectrometry and positron annihilation ...
  • Investigation of n-Al:ZnO/p-Cu2O heterojunction for c-Si tandem heterojunction solar cell applications 
    Kumar, Raj; Nordseth, Ørnulf; Vasquez, Geraldo Cristian; Foss, Sean Erik; Monakhov, Eduard; Svensson, Bengt Gunnar (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2019)
    In this work, an in-situ growth approach has been employed to fabricate Al:ZnO/Cu2O/Cu and Al:ZnO/ZnO/Cu2O/Cu heterojunctions using direct current (DC) and radio frequency (RF) magnetron sputtering technique in a controlled ...
  • Kinetics modeling of the carbon vacancy thermal equilibration in 4H-SiC 
    Ayedh, Hussein Mohammed Hussein; Nipoti, Roberta; Hallen, Anders; Svensson, Bengt Gunnar (Journal article / Tidsskriftartikkel / AcceptedVersion; Peer reviewed, 2018)
    The carbon vacancy (VC) is a major limiting-defect of minority carrier lifetime in n-type 4H-SiC epitaxial layers and it is readily formed during high temperature processing. In this study, a kinetics model is put forward ...
  • Long range lateral migration of intrinsic point defects in n-type 4H-SiC 
    Løvlie, Lars Sundnes; Vines, Lasse; Svensson, Bengt Gunnar (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2012)
    The lateral distributions of intrinsic point defects in n-type (0001) 4H-SiC have been investigated following room temperature irradiation with a focused beam of 10 keV protons. Laterally resolved deep level transient ...
  • Metal Oxide Thin-Film Heterojunctions for Photovoltaic Applications 
    Nordseth, Ørnulf; Kumar, Raj; Bergum, Kristin; Fara, Laurentiu; Dumitru, Constantin; Craciunescu, Dan; Dragan, Florin; Chilibon, Irinela; Monakhov, Edouard; Foss, Sean Erik; Svensson, Bengt Gunnar (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2018)
    Silicon-based tandem solar cells incorporating low-cost, abundant, and non-toxic metal oxide materials can increase the conversion efficiency of silicon solar cells beyond their conventional limitations with obvious economic ...
  • Optical signatures of single ion tracks in ZnO 
    Vasquez, Geraldo Cristian; Johansen, Klaus Magnus H; Galeckas, Augustinas; Vines, Lasse; Svensson, Bengt Gunnar (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2020)
    The optical properties of single ion tracks have been studied in ZnO implanted with Ge by combining depth-resolved hyperspectral cathodoluminescence (CL) and photoluminescence (PL) spectroscopy techniques. The results ...
  • Oxidation-enhanced annealing of implantation-induced Z(1/2) centers in 4H-SiC: Reaction kinetics and modeling 
    Løvlie, Lars Sundnes; Svensson, Bengt Gunnar (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2012)
    High-purity epitaxial layers of n-type 4H-SiC have been implanted with 4.3-MeV Si ions to a dose of 3 × 108 cm−2 and then subjected to dry isothermal oxidation at temperatures between 1050 and 1175 °C. Analysis of the ...
  • Role of Nitrogen in Defect Evolution in Zinc Oxide: STEM−EELS Nanoscale Investigations 
    Bazioti, Kalliopi; Azarov, Alexander; Johansen, Klaus Magnus H; Svensson, Bengt Gunnar; Vines, Lasse; Kuznetsov, Andrej; Prytz, Øystein (Journal article / Tidsskriftartikkel / AcceptedVersion; Peer reviewed, 2019)
    Direct evidence of the formation of nitrogen molecules (N2) after ion implantion of ZnO has been revealed by an atomically resolved scanning transmission electron microscopy (STEM)–electron energy-loss spectroscopy (EELS) ...
  • Thermally induced surface instability in ion-implanted MgxZn1−xO films 
    Azarov, Alexander; Hallén, Anders; Du, Xiaolong; Liu, Z. L.; Svensson, Bengt Gunnar; Kuznetsov, Andrej (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2011)
    Thermal stability of originally single crystalline wurtzite MgxZn1−xO (x ⩽ 0.3) films implanted at room temperature with 166Er ions is studied by a combination of Rutherford backscattering spectrometry, time-of-flight ...