Finn forfatter "Radamson, H.H."

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  • Stabilization of Ge-rich defect complexes originating from E centers in Si1-xGex:P 
    Kilpelainen, S; Kuitunen, K; Tuomisto, F; Slotte, J; Radamson, H.H.; Kuznetsov, Andrej (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2010)
    Thermal evolution of vacancy complexes was studied in P-doped ([P]=1018 cm−3) proton irradiated Si1−xGex with Ge contents of 10%, 20%, and 30% in the range of 250–350 °C using positron annihilation spectroscopy. The radiation ...