Browsing Det matematisk-naturvitenskapelige fakultet by Author "Langørgen, Amanda"

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  • Defect level in κ-Ga2O3 revealed by thermal admittance spectroscopy 
    Langørgen, Amanda; Frodason, Ymir Kalmann; Karsthof, Robert Michael; Von Wenckstern, Holger; Jensen, Ingvild Julie Thue; Vines, Lasse; Grundmann, Marius (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2023)
    Defects in pulsed-laser deposition grown have been investigated using thermal admittance spectroscopy and secondary ion mass spectrometry (SIMS). A film was grown on either a tin-doped indium oxide or an aluminum-doped ...
  • Influence of heat treatments in H2 and Ar on the E1 center in β-Ga2O3 
    Langørgen, Amanda; Zimmermann, Christian; Frodason, Ymir Kalmann; Verhoeven, Espen Førdestrøm; Weiser, Philip Michael; Karsthof, Robert Michael; Basile Varley, Joel; Vines, Lasse (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2022)
    The influence of heat treating [Formula: see text]-type bulk [Formula: see text]-Ga[Formula: see text]O[Formula: see text] in hydrogen (H[Formula: see text]) and argon (Ar) gases on the presence of the defect level commonly ...
  • On the possible nature of deep centers in Ga2O3 
    Polyakov, A.Y.; Kochkova, A.I.; Langørgen, Amanda; Vines, Lasse; Vasilev, A.; Shchemerov, I.V.; Romanov, A.A.; Pearton, S.J. (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2023)
    The electric field dependence of emission rate of the deep traps with level near Ec−0.6 eV, so-called E1 traps, was studied by means of deep level transient spectroscopy measurements over a wide range of applied voltages. ...