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  • Prucnal, Slawomir; Berencen, Yonder; Wang, Mao; Georgiev, Yordan Nikolaev; Erbe, Artur; Khan, MB; Boettger, Roman; Hübner, Renè; Schoenherr, Tommy; Kalbacova, Jana; Vines, Lasse; Facsko, Stefan; Engler, Martin; Zahn, D. R. T.; Knoch, Joachim; Helm, Manfred; Skorupa, Wolfgang; Zhou, Shengqiang (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2019)
    Ge-on-Si and Ge-on-insulator (GeOI) are the most promising materials for the next-generation nanoelectronics that can be fully integrated with silicon technology. To this day, the fabrication of Ge-based transistors with ...