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dc.date.accessioned2013-10-03T10:01:08Z
dc.date.available2013-10-03T10:01:08Z
dc.date.issued2013en_US
dc.date.submitted2013-05-31en_US
dc.identifier.citationRiise, Heine Nygard. Substrate, Doping and Annealing Effects on Sputtered Zinc Oxide Thin Films. Masteroppgave, University of Oslo, 2013en_US
dc.identifier.urihttp://hdl.handle.net/10852/37163
dc.description.abstractZinc Oxide is a promising material for reducing the price of solar cells since its high abundance and low cost makes it attractive in replacing the more commonly used and more expensive Indium Tin Oxide as a transparent front contact. Using co-sputtering of Zinc Oxide and Silicon, highly transparent (>80% transmittance in visible range) and low-resistive ( ~0.001 ohmcm) films have been prepared. Annealing of the films in air at temperatures ranging from 550 C to 1050 C leads to an improved crystal quality, but the heat treatment is seen to have an adverse effect on the electrical characteristics of the films. Both the electrical characteristics and the crystal quality of the samples improve with Si doping up to a concentration of 1.5 +/- 0.5%. Above this concentration, these properties degrade. The films have been deposited on different substrates, and it is found that deposition on crystalline Silicon and glass produce films of good electrical and crystal quality while deposition on amorphous Zinc Oxide leads to films of poor quality. Although this substrate leads to films of low crystal quality (close to amorphous), the films still have satisfactory electrical and optical properties. It is also found that Silicon and Aluminium addition to the films leads to lower grain sizes suggesting that Silicon and Aluminium act as mobility inhibiting surfactants. Attempts to manufacture Silicon nanocrystals embedded in a Zinc Oxide matrix have been made but they proved to be unsuccessful. This is most likely due to the low formation energy of Silicon Dioxide.eng
dc.language.isoengen_US
dc.titleSubstrate, Doping and Annealing Effects on Sputtered Zinc Oxide Thin Filmsen_US
dc.typeMaster thesisen_US
dc.date.updated2013-09-26en_US
dc.creator.authorRiise, Heine Nygarden_US
dc.subject.nsiVDP::430en_US
dc.identifier.bibliographiccitationinfo:ofi/fmt:kev:mtx:ctx&ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&rft.au=Riise, Heine Nygard&rft.title=Substrate, Doping and Annealing Effects on Sputtered Zinc Oxide Thin Films&rft.inst=University of Oslo&rft.date=2013&rft.degree=Masteroppgaveen_US
dc.identifier.urnURN:NBN:no-38641
dc.type.documentMasteroppgaveen_US
dc.identifier.duo181829en_US
dc.contributor.supervisorProf. Bengt G. Svensson, Dr. Ramòn Schifanoen_US
dc.identifier.fulltextFulltext https://www.duo.uio.no/bitstream/handle/10852/37163/1/Riise_Masters_Thesis.pdf


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