Browsing Fysisk institutt by Author "Wong-Leung, J."

Now showing items 1-2 of 2

  • Acceptor-like deep level defects in ion-implanted ZnO 
    Vines, Lasse; Wong-Leung, J.; Jagadish, C.; Quemener, Vincent; Monakhov, Edouard; Svensson, Bengt Gunnar (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2012)
    N-type ZnO samples have been implanted with MeV Zn+ ions at room temperature to doses between 1×108 and 2×1010cm−2, and the defect evolution has been studied by capacitance-voltage and deep level transient spectroscopy ...
  • Comparison of the structural properties of Zn-face and O-face single crystal homoepitaxial ZnO epilayers grown by RF-magnetron sputtering 
    Schifano, Ramon; Riise, Heine Nygard; Domagala, J.; Azarov, Alexander; Ratajczak, R.; Monakhov, Edouard; Venkatachalapathy, Vishnukanthan; Vines, Lasse; Chan, K. S.; Wong-Leung, J.; Svensson, Bengt Gunnar (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2016)
    Homoepitaxial ZnO growth is demonstrated from conventional RF-sputtering at 400 °C on both Zn and O polar faces of hydrothermally grown ZnO substrates. A minimum yield for the Rutherford backscattering and channeling ...