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  • Ghadi, Hemant; McGlone, Joe F.; Cornuelle, Evan; Senckowski, Alexander; Sharma, Shivam; Wong, Man Hoi; Singisetti, Uttam; Frodason, Ymir Kalmann; Peelaers, Hartwin; Lyons, John; Varley, Joel Basile; Van de Walle, Chris G.; Arehart, Aaron; Ringel, Steven A. (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2023)
    The ability to achieve highly resistive beta-phase gallium oxide (β-Ga2O3) layers and substrates is critical for β-Ga2O3 high voltage and RF devices. To date, the most common approach involves doping with iron (Fe), which ...