Browsing Fysisk institutt by Author "Ul-Hassan, Jawad"

Now showing items 1-2 of 2

  • Dual configuration of shallow acceptor levels in 4H-SiC 
    Bathen, Marianne Etzelmüller; Kumar, Piyush; Ghezellou, Misagh; Belanche, Manuel; Vines, Lasse; Ul-Hassan, Jawad; Grossner, Ulrike (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2024)
    Acceptor dopants in 4H-SiC exhibit energy levels that are located deeper in the band gap than the thermal energy at room temperature (RT), resulting in incomplete ionization at RT. Therefore, a comprehensive understanding ...
  • The role of boron related defects in limiting charge carrier lifetime in 4H-SiC epitaxial layers 
    Ghezellou, Misagh; Kumar, Piyush; Bathen, Marianne E.; Karsthof, Robert Michael; Sveinbjörnsson, Einar Ö.; Grossner, Ulrike; Bergman, J. Peder; Vines, Lasse; Ul-Hassan, Jawad (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2023)
    One of the main challenges in realizing 4H–SiC (silicon carbide)-based bipolar devices is the improvement of minority carrier lifetime in as-grown epitaxial layers. Although Z1/2 has been identified as the dominant carrier ...