dc.date.accessioned | 2013-03-12T08:29:29Z | |
dc.date.available | 2013-03-12T08:29:29Z | |
dc.date.issued | 2011 | en_US |
dc.date.submitted | 2011-09-30 | en_US |
dc.identifier.citation | Kirkemo, Camilla Nestande. Monte Carlo simulation of pn-junctions. Masteroppgave, University of Oslo, 2011 | en_US |
dc.identifier.uri | http://hdl.handle.net/10852/11062 | |
dc.description.abstract | The Monte Carlo method is a widely used and acknowledged method for semiconductor device simulations. We have developed a Monte Carlo device simulator for CdHgTe devices and obtained the device characteristics for two components, a pn-diode and an avalanche photodiode (APD). We have investigated some weaknesses of the Monte Carlo method when applied to pn-junction devices. | eng |
dc.language.iso | eng | en_US |
dc.title | Monte Carlo simulation of pn-junctions | en_US |
dc.type | Master thesis | en_US |
dc.date.updated | 2012-01-24 | en_US |
dc.creator.author | Kirkemo, Camilla Nestande | en_US |
dc.subject.nsi | VDP::430 | en_US |
dc.identifier.bibliographiccitation | info:ofi/fmt:kev:mtx:ctx&ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&rft.au=Kirkemo, Camilla Nestande&rft.title=Monte Carlo simulation of pn-junctions&rft.inst=University of Oslo&rft.date=2011&rft.degree=Masteroppgave | en_US |
dc.identifier.urn | URN:NBN:no-29691 | en_US |
dc.type.document | Masteroppgave | en_US |
dc.identifier.duo | 136315 | en_US |
dc.contributor.supervisor | Brudevoll, Trond; Storebø, Asta; Hjorth-Jensen, Morten | en_US |
dc.identifier.bibsys | 120187817 | en_US |
dc.identifier.fulltext | Fulltext https://www.duo.uio.no/bitstream/handle/10852/11062/1/KirkemoMaster.pdf | |