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dc.date.accessioned2013-03-12T08:29:29Z
dc.date.available2013-03-12T08:29:29Z
dc.date.issued2011en_US
dc.date.submitted2011-09-30en_US
dc.identifier.citationKirkemo, Camilla Nestande. Monte Carlo simulation of pn-junctions. Masteroppgave, University of Oslo, 2011en_US
dc.identifier.urihttp://hdl.handle.net/10852/11062
dc.description.abstractThe Monte Carlo method is a widely used and acknowledged method for semiconductor device simulations. We have developed a Monte Carlo device simulator for CdHgTe devices and obtained the device characteristics for two components, a pn-diode and an avalanche photodiode (APD). We have investigated some weaknesses of the Monte Carlo method when applied to pn-junction devices.eng
dc.language.isoengen_US
dc.titleMonte Carlo simulation of pn-junctionsen_US
dc.typeMaster thesisen_US
dc.date.updated2012-01-24en_US
dc.creator.authorKirkemo, Camilla Nestandeen_US
dc.subject.nsiVDP::430en_US
dc.identifier.bibliographiccitationinfo:ofi/fmt:kev:mtx:ctx&ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&rft.au=Kirkemo, Camilla Nestande&rft.title=Monte Carlo simulation of pn-junctions&rft.inst=University of Oslo&rft.date=2011&rft.degree=Masteroppgaveen_US
dc.identifier.urnURN:NBN:no-29691en_US
dc.type.documentMasteroppgaveen_US
dc.identifier.duo136315en_US
dc.contributor.supervisorBrudevoll, Trond; Storebø, Asta; Hjorth-Jensen, Mortenen_US
dc.identifier.bibsys120187817en_US
dc.identifier.fulltextFulltext https://www.duo.uio.no/bitstream/handle/10852/11062/1/KirkemoMaster.pdf


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