dc.date.accessioned | 2024-04-11T15:18:21Z | |
dc.date.available | 2024-04-11T15:18:21Z | |
dc.date.created | 2024-04-09T10:14:22Z | |
dc.date.issued | 2024 | |
dc.identifier.citation | Bathen, Marianne Etzelmüller Kumar, Piyush Ghezellou, Misagh Belanche, Manuel Vines, Lasse Ul-Hassan, Jawad Grossner, Ulrike . Dual configuration of shallow acceptor levels in 4H-SiC. Materials Science in Semiconductor Processing. 2024, 177 | |
dc.identifier.uri | http://hdl.handle.net/10852/110563 | |
dc.description.abstract | Acceptor dopants in 4H-SiC exhibit energy levels that are located deeper in the band gap than the thermal energy at room temperature (RT), resulting in incomplete ionization at RT. Therefore, a comprehensive understanding of the defect energetics and how the impurities are introduced into the material is imperative. Herein, we study impurity related defect levels in 4H-SiC epitaxial layers (epi-layers) grown by chemical vapor deposition (CVD) under various conditions using minority carrier transient spectroscopy (MCTS). We find two trap levels assigned to boron impurities, B and D, which are introduced to varying degrees depending on the growth conditions. A second acceptor level that was labeled X in the literature and attributed to impurity related defects is also observed. Importantly, both the B and X levels exhibit fine structure revealed by MCTS measurements. We attribute the fine structure to acceptor impurities at hexagonal and pseudo-cubic lattice sites in 4H-SiC, and tentatively assign the X peak to Al based on experimental findings and density functional theory calculations. | |
dc.language | EN | |
dc.rights | Attribution 4.0 International | |
dc.rights.uri | https://creativecommons.org/licenses/by/4.0/ | |
dc.title | Dual configuration of shallow acceptor levels in 4H-SiC | |
dc.title.alternative | ENEngelskEnglishDual configuration of shallow acceptor levels in 4H-SiC | |
dc.type | Journal article | |
dc.creator.author | Bathen, Marianne Etzelmüller | |
dc.creator.author | Kumar, Piyush | |
dc.creator.author | Ghezellou, Misagh | |
dc.creator.author | Belanche, Manuel | |
dc.creator.author | Vines, Lasse | |
dc.creator.author | Ul-Hassan, Jawad | |
dc.creator.author | Grossner, Ulrike | |
cristin.unitcode | 185,15,17,20 | |
cristin.unitname | Senter for Materialvitenskap og Nanoteknologi fysikk | |
cristin.ispublished | true | |
cristin.fulltext | original | |
cristin.qualitycode | 1 | |
dc.identifier.cristin | 2260107 | |
dc.identifier.bibliographiccitation | info:ofi/fmt:kev:mtx:ctx&ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Materials Science in Semiconductor Processing&rft.volume=177&rft.spage=&rft.date=2024 | |
dc.identifier.jtitle | Materials Science in Semiconductor Processing | |
dc.identifier.volume | 177 | |
dc.identifier.doi | https://doi.org/10.1016/j.mssp.2024.108360 | |
dc.type.document | Tidsskriftartikkel | |
dc.type.peerreviewed | Peer reviewed | |
dc.source.issn | 1369-8001 | |
dc.type.version | PublishedVersion | |
cristin.articleid | 108360 | |
dc.relation.project | SEM/43611-1 | |
dc.relation.project | SEM/2020-05444 | |
dc.relation.project | NFR/325573 | |
dc.relation.project | NFR/295864 | |