Impact of carbon injection in 4H-SiC on defect formation and minority carrier lifetime

dc.date.accessioned	2024-04-04T15:45:32Z
dc.date.available	2024-04-04T15:45:32Z
dc.date.created	2024-03-15T09:35:17Z
dc.date.issued	2024
dc.identifier.citation	Bathen, Marianne Etzelmüller Karsthof, Robert Michael Galeckas, Augustinas Kumar, Piyush Kuznetsov, Andrej Grossner, Ulrike Vines, Lasse . Impact of carbon injection in 4H-SiC on defect formation and minority carrier lifetime. Materials Science in Semiconductor Processing. 2024, 176
dc.identifier.uri	http://hdl.handle.net/10852/110371
dc.language	EN
dc.rights	Attribution 4.0 International
dc.rights.uri	https://creativecommons.org/licenses/by/4.0/
dc.title	Impact of carbon injection in 4H-SiC on defect formation and minority carrier lifetime
dc.title.alternative	ENEngelskEnglishImpact of carbon injection in 4H-SiC on defect formation and minority carrier lifetime
dc.type	Journal article
dc.creator.author	Bathen, Marianne Etzelmüller
dc.creator.author	Karsthof, Robert Michael
dc.creator.author	Galeckas, Augustinas
dc.creator.author	Kumar, Piyush
dc.creator.author	Kuznetsov, Andrej
dc.creator.author	Grossner, Ulrike
dc.creator.author	Vines, Lasse
cristin.unitcode	185,15,17,20
cristin.unitname	Senter for Materialvitenskap og Nanoteknologi fysikk
cristin.ispublished	true
cristin.fulltext	original
cristin.qualitycode	1
dc.identifier.cristin	2254657
dc.identifier.bibliographiccitation	info:ofi/fmt:kev:mtx:ctx&ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Materials Science in Semiconductor Processing&rft.volume=176&rft.spage=&rft.date=2024
dc.identifier.jtitle	Materials Science in Semiconductor Processing
dc.identifier.volume	176
dc.identifier.doi	https://doi.org/10.1016/j.mssp.2024.108316
dc.type.document	Tidsskriftartikkel
dc.type.peerreviewed	Peer reviewed
dc.source.issn	1369-8001
dc.type.version	PublishedVersion
cristin.articleid	108316
dc.relation.project	NFR/295864
dc.relation.project	NFR/325573