Al-implantation induced damage in 4H-SiC

dc.date.accessioned	2024-04-04T15:44:35Z
dc.date.available	2024-04-04T15:44:35Z
dc.date.created	2024-03-15T09:31:15Z
dc.date.issued	2024
dc.identifier.citation	Kumar, Piyush Martins, Maria I. M. Bathen, Marianne Etzelmüller Prokscha, Thomas Grossner, Ulrike . Al-implantation induced damage in 4H-SiC. Materials Science in Semiconductor Processing. 2024, 174
dc.identifier.uri	http://hdl.handle.net/10852/110370
dc.language	EN
dc.rights	Attribution 4.0 International
dc.rights.uri	https://creativecommons.org/licenses/by/4.0/
dc.title	Al-implantation induced damage in 4H-SiC
dc.title.alternative	ENEngelskEnglishAl-implantation induced damage in 4H-SiC
dc.type	Journal article
dc.creator.author	Kumar, Piyush
dc.creator.author	Martins, Maria I. M.
dc.creator.author	Bathen, Marianne Etzelmüller
dc.creator.author	Prokscha, Thomas
dc.creator.author	Grossner, Ulrike
cristin.unitcode	185,15,17,20
cristin.unitname	Senter for Materialvitenskap og Nanoteknologi fysikk
cristin.ispublished	true
cristin.fulltext	original
cristin.qualitycode	1
dc.identifier.cristin	2254653
dc.identifier.bibliographiccitation	info:ofi/fmt:kev:mtx:ctx&ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Materials Science in Semiconductor Processing&rft.volume=174&rft.spage=&rft.date=2024
dc.identifier.jtitle	Materials Science in Semiconductor Processing
dc.identifier.volume	174
dc.identifier.doi	https://doi.org/10.1016/j.mssp.2024.108241
dc.type.document	Tidsskriftartikkel
dc.type.peerreviewed	Peer reviewed
dc.source.issn	1369-8001
dc.type.version	PublishedVersion
cristin.articleid	108241