dc.date.accessioned | 2024-04-03T16:15:36Z | |
dc.date.created | 2023-06-05T09:18:10Z | |
dc.date.issued | 2023 | |
dc.identifier.citation | Polyakov, A.Y. Vasilev, A.A. Shchemerov, I.V. Chernykh, A.V. Shetinin, I.V. Zhevnerov, E.V. Kochkova, A.I. Lagov, P.B. Miakonkikh, A.V. Pavlov, Yu.S. Kobets, U.A. Lee, In-Hwan Kuznetsov, Andrej Pearton, S.J. . Conducting surface layers formed by hydrogenation of O-implanted β-Ga2O3. Journal of Alloys and Compounds. 2023, 945 | |
dc.identifier.uri | http://hdl.handle.net/10852/110304 | |
dc.description.abstract | Lightly n-type β-Ga2O3 grown by Halide Vapor Phase Epitaxy (HVPE) on heavily n-type doped β-Ga2O3 substrate was implanted with 1 MeV O ions to a fluence of 1016 cm−2. The film remained β-polymorph and showed no broadening of the x-ray rocking curve width after irradiation even though the calculated number of primary defects was very high. The implanted region was characterized by a strong compensation, likely due to the presence of a high density of split Ga vacancy acceptors. Treatment of the irradiated film in dense hydrogen plasma at 330 °C for 0.5 h led to the formation of a conducting surface layer about 0.5 µm-thick with carrier density 1017 cm−3, a suppression of the signal due to Fe acceptors in Deep Level transient Spectroscopy (DLTS) and a strong enhancement of DLTS peak caused by centers at Ec-0.74 eV (so called E2 * traps). The mechanism appears to be that hydrogen plasma treatment leads to creation of a high number of donor states due complexing of hydrogen with Ga vacancies and to passivation of Fe acceptors with hydrogen donors. | |
dc.language | EN | |
dc.rights | Attribution-NonCommercial-NoDerivatives 4.0 International | |
dc.rights.uri | https://creativecommons.org/licenses/by-nc-nd/4.0/ | |
dc.title | Conducting surface layers formed by hydrogenation of O-implanted β-Ga2O3 | |
dc.title.alternative | ENEngelskEnglishConducting surface layers formed by hydrogenation of O-implanted β-Ga2O3 | |
dc.type | Journal article | |
dc.creator.author | Polyakov, A.Y. | |
dc.creator.author | Vasilev, A.A. | |
dc.creator.author | Shchemerov, I.V. | |
dc.creator.author | Chernykh, A.V. | |
dc.creator.author | Shetinin, I.V. | |
dc.creator.author | Zhevnerov, E.V. | |
dc.creator.author | Kochkova, A.I. | |
dc.creator.author | Lagov, P.B. | |
dc.creator.author | Miakonkikh, A.V. | |
dc.creator.author | Pavlov, Yu.S. | |
dc.creator.author | Kobets, U.A. | |
dc.creator.author | Lee, In-Hwan | |
dc.creator.author | Kuznetsov, Andrej | |
dc.creator.author | Pearton, S.J. | |
dc.date.embargoenddate | 2025-02-14 | |
cristin.unitcode | 185,15,4,90 | |
cristin.unitname | Halvlederfysikk | |
cristin.ispublished | true | |
cristin.fulltext | postprint | |
cristin.qualitycode | 1 | |
dc.identifier.cristin | 2151671 | |
dc.identifier.bibliographiccitation | info:ofi/fmt:kev:mtx:ctx&ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Journal of Alloys and Compounds&rft.volume=945&rft.spage=&rft.date=2023 | |
dc.identifier.jtitle | Journal of Alloys and Compounds | |
dc.identifier.volume | 945 | |
dc.identifier.pagecount | 0 | |
dc.identifier.doi | https://doi.org/10.1016/j.jallcom.2023.169258 | |
dc.type.document | Tidsskriftartikkel | |
dc.type.peerreviewed | Peer reviewed | |
dc.source.issn | 0925-8388 | |
dc.type.version | AcceptedVersion | |
cristin.articleid | 169258 | |