dc.date.accessioned | 2024-03-25T17:24:30Z | |
dc.date.available | 2024-03-25T17:24:30Z | |
dc.date.created | 2023-06-22T15:08:49Z | |
dc.date.issued | 2023 | |
dc.identifier.citation | Bathen, Marianne Etzelmüller Selnesaunet, Gard Momrak Enga, Marius Kjeldby, Snorre B. Müting, Johanna Vines, Lasse Grossner, Ulrike . Charge State Control Over Point Defects in SiC Devices. Defect and Diffusion Forum. 2023, 425, 35-42 | |
dc.identifier.uri | http://hdl.handle.net/10852/110112 | |
dc.description.abstract | Point defects in silicon carbide (SiC) are well positioned for integration with SiC based quantum photonic devices due to the maturity of SiC material and fabrication technology, the plethora of candidate quantum emitters that can be formed in SiC, and the potential for emission over a wide spectral range from the visible to the infrared. However, for each of the available color centers in SiC, only one of the charge states has displayed quantum emission, meaning that the emission strongly depends on the Fermi level and hence the doping concentration in the material. In this contribution, we discuss the methodology and mechanism for electrical charge-state control over point defects in SiC devices. | |
dc.language | EN | |
dc.publisher | Trans Tech Publications Ltd. | |
dc.rights | Attribution 4.0 International | |
dc.rights.uri | https://creativecommons.org/licenses/by/4.0/ | |
dc.title | Charge State Control Over Point Defects in SiC Devices | |
dc.title.alternative | ENEngelskEnglishCharge State Control Over Point Defects in SiC Devices | |
dc.type | Journal article | |
dc.creator.author | Bathen, Marianne Etzelmüller | |
dc.creator.author | Selnesaunet, Gard Momrak | |
dc.creator.author | Enga, Marius | |
dc.creator.author | Kjeldby, Snorre B. | |
dc.creator.author | Müting, Johanna | |
dc.creator.author | Vines, Lasse | |
dc.creator.author | Grossner, Ulrike | |
cristin.unitcode | 185,15,30,0 | |
cristin.unitname | Institutt for teknologisystemer | |
cristin.ispublished | true | |
cristin.fulltext | original | |
cristin.qualitycode | 1 | |
dc.identifier.cristin | 2157224 | |
dc.identifier.bibliographiccitation | info:ofi/fmt:kev:mtx:ctx&ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Defect and Diffusion Forum&rft.volume=425&rft.spage=35&rft.date=2023 | |
dc.identifier.jtitle | Defect and Diffusion Forum | |
dc.identifier.volume | 425 | |
dc.identifier.startpage | 35 | |
dc.identifier.endpage | 42 | |
dc.identifier.doi | https://doi.org/10.4028/p-6ho92o | |
dc.type.document | Tidsskriftartikkel | |
dc.type.peerreviewed | Peer reviewed | |
dc.source.issn | 1012-0386 | |
dc.type.version | PublishedVersion | |
dc.relation.project | SIGMA2/NN9136K | |
dc.relation.project | NFR/325573 | |
dc.relation.project | NFR/295864 | |