dc.date.accessioned | 2024-03-19T16:47:28Z | |
dc.date.available | 2024-03-19T16:47:28Z | |
dc.date.created | 2023-08-18T13:54:23Z | |
dc.date.issued | 2023 | |
dc.identifier.citation | Saxegaard, Kjetil Karlsen Vines, Lasse Monakhov, Eduard Bergum, Kristin . Characteristics of ZnON films and heterojunction diodes with varying O:N ratios. Thin Solid Films. 2023, 782 | |
dc.identifier.uri | http://hdl.handle.net/10852/109862 | |
dc.description.abstract | Zinc Oxynitride (ZnOxNy) thin films display high mobilities and a considerable tunability of both the free electron concentration and optical band gap. The properties achievable for this material system makes ZnOxNy an intriguing n-type absorber candidate in silicon-based tandem solar cells. We have studied how the O:N ratio affect structural, optical and electrical properties of magnetron sputtered ZnOxNy thin films, as well the electrical behavior of ZnOxNy-Si pn heterojunction diodes. X-ray diffraction of the ZnOxNy films indicate either a Zn3N2-like structure or ZnO-like grains in combination with structural disorder. As the O:N ratio is increased, the optical band gap of ZnOxNy films increase from 1.1 to 1.9 eV. Hall effect measurements of the n-type ZnOxNy films show free electron concentrations varying with the O:N ratio, from 9.8 × 1017 to 1.5 × 1016 cm−3. Hall mobility up to 88 cm2∕Vs is achieved. We observe the formation of pn heterojunction diodes between ZnOxNy-films and p-Si. The electrical characteristics of these diodes are shown to depend on the ZnOxNy anion composition. Current rectification of 3.7 orders of magnitude is achieved between -1 and 1 V at room temperature. However, the built in voltage extracted from capacitance–voltage measurements are higher than theory suggest, implying an influence of defects on the electrical characteristics. | |
dc.language | EN | |
dc.rights | Attribution 4.0 International | |
dc.rights.uri | https://creativecommons.org/licenses/by/4.0/ | |
dc.title | Characteristics of ZnON films and heterojunction diodes with varying O:N ratios | |
dc.title.alternative | ENEngelskEnglishCharacteristics of ZnON films and heterojunction diodes with varying O:N ratios | |
dc.type | Journal article | |
dc.creator.author | Saxegaard, Kjetil Karlsen | |
dc.creator.author | Vines, Lasse | |
dc.creator.author | Monakhov, Eduard | |
dc.creator.author | Bergum, Kristin | |
cristin.unitcode | 185,15,17,0 | |
cristin.unitname | Senter for materialvitenskap og nanoteknologi | |
cristin.ispublished | true | |
cristin.fulltext | original | |
cristin.qualitycode | 1 | |
dc.identifier.cristin | 2168006 | |
dc.identifier.bibliographiccitation | info:ofi/fmt:kev:mtx:ctx&ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Thin Solid Films&rft.volume=782&rft.spage=&rft.date=2023 | |
dc.identifier.jtitle | Thin Solid Films | |
dc.identifier.volume | 782 | |
dc.identifier.doi | https://doi.org/10.1016/j.tsf.2023.139968 | |
dc.type.document | Tidsskriftartikkel | |
dc.type.peerreviewed | Peer reviewed | |
dc.source.issn | 0040-6090 | |
dc.type.version | PublishedVersion | |
cristin.articleid | 139968 | |
dc.relation.project | NFR/295864 | |
dc.relation.project | NFR/288596 | |