dc.date.accessioned | 2024-03-18T18:09:43Z | |
dc.date.available | 2024-03-18T18:09:43Z | |
dc.date.created | 2023-04-02T13:45:59Z | |
dc.date.issued | 2023 | |
dc.identifier.citation | Ghezellou, Misagh Kumar, Piyush Bathen, Marianne E. Karsthof, Robert Michael Sveinbjörnsson, Einar Ö. Grossner, Ulrike Bergman, J. Peder Vines, Lasse Ul-Hassan, Jawad . The role of boron related defects in limiting charge carrier lifetime in 4H-SiC epitaxial layers. APL Materials. 2023, 11(3) | |
dc.identifier.uri | http://hdl.handle.net/10852/109782 | |
dc.description.abstract | One of the main challenges in realizing 4H–SiC (silicon carbide)-based bipolar devices is the improvement of minority carrier lifetime in as-grown epitaxial layers. Although Z1/2 has been identified as the dominant carrier lifetime limiting defect, we report on B-related centers being another dominant source of recombination and acting as lifetime limiting defects in 4H–SiC epitaxial layers. Combining time-resolved photoluminescence (TRPL) measurement in near band edge emission and 530 nm, deep level transient spectroscopy, and minority carrier transient spectroscopy (MCTS), it was found that B related deep levels in the lower half of the bandgap are responsible for killing the minority carriers in n-type, 4H–SiC epitaxial layers when the concentration of Z1/2 is already low. The impact of these centers on the charge carrier dynamics is investigated by correlating the MCTS results with temperature-dependent TRPL decay measurements. It is shown that the influence of shallow B acceptors on the minority carrier lifetime becomes neutralized at temperatures above ∼422 K. Instead, the deep B related acceptor level, known as the D-center, remains active until temperatures above ∼570 K. Moreover, a correlation between the deep level concentrations, minority carrier lifetimes, and growth parameters indicates that intentional nitrogen doping hinders the formation of deep B acceptor levels. Furthermore, tuning growth parameters, including growth temperature and C/Si ratio, is shown to be crucial for improving the minority carrier lifetime in as-grown 4H–SiC epitaxial layers. | |
dc.language | EN | |
dc.publisher | AIP (American Institute of Physics) | |
dc.rights | Attribution 4.0 International | |
dc.rights.uri | https://creativecommons.org/licenses/by/4.0/ | |
dc.title | The role of boron related defects in limiting charge carrier lifetime in 4H-SiC epitaxial layers | |
dc.title.alternative | ENEngelskEnglishThe role of boron related defects in limiting charge carrier lifetime in 4H-SiC epitaxial layers | |
dc.type | Journal article | |
dc.creator.author | Ghezellou, Misagh | |
dc.creator.author | Kumar, Piyush | |
dc.creator.author | Bathen, Marianne E. | |
dc.creator.author | Karsthof, Robert Michael | |
dc.creator.author | Sveinbjörnsson, Einar Ö. | |
dc.creator.author | Grossner, Ulrike | |
dc.creator.author | Bergman, J. Peder | |
dc.creator.author | Vines, Lasse | |
dc.creator.author | Ul-Hassan, Jawad | |
cristin.unitcode | 185,15,4,0 | |
cristin.unitname | Fysisk institutt | |
cristin.ispublished | true | |
cristin.fulltext | original | |
cristin.qualitycode | 1 | |
dc.identifier.cristin | 2139117 | |
dc.identifier.bibliographiccitation | info:ofi/fmt:kev:mtx:ctx&ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=APL Materials&rft.volume=11&rft.spage=&rft.date=2023 | |
dc.identifier.jtitle | APL Materials | |
dc.identifier.volume | 11 | |
dc.identifier.issue | 3 | |
dc.identifier.pagecount | 0 | |
dc.identifier.doi | https://doi.org/10.1063/5.0142415 | |
dc.type.document | Tidsskriftartikkel | |
dc.type.peerreviewed | Peer reviewed | |
dc.source.issn | 2166-532X | |
dc.type.version | PublishedVersion | |
cristin.articleid | 031107 | |
dc.relation.project | NFR/295864 | |
dc.relation.project | NFR/325573 | |
dc.relation.project | SIGMA2/NN9136K | |