dc.date.accessioned | 2024-02-10T18:25:28Z | |
dc.date.available | 2024-02-10T18:25:28Z | |
dc.date.created | 2023-08-24T09:05:41Z | |
dc.date.issued | 2023 | |
dc.identifier.citation | Røst, Håkon Cooil, Simon Phillip Åsland, Anna Cecilie Hu, Jinbang Ali, Ayaz Taniguchi, Takashi Watanabe, Kenji Belle, Branson Delano Holst, Bodil Sadowski, Jerzy Mazzola, Federico Wells, Justin William . Phonon-Mediated Quasiparticle Lifetime Renormalizations in Few-Layer Hexagonal Boron Nitride. Nano Letters. 2023, 23(16), 7539-7545 | |
dc.identifier.uri | http://hdl.handle.net/10852/107846 | |
dc.description.abstract | Understanding the collective behavior of the quasiparticles in solid-state systems underpins the field of non-volatile electronics, including the opportunity to control many-body effects for well-desired physical phenomena and their applications. Hexagonal boron nitride (hBN) is a wide energy bandgap semiconductor, showing immense potential as a platform for low-dimensional device heterostructures. It is an inert dielectric used for gated devices, having a negligible orbital hybridization when placed in contact with other systems. Despite its inertness, we discover a large electron mass enhancement in few-layer hBN affecting the lifetime of the pi-band states. We show that the renormalization is phonon-mediated and consistent with both single- and multiple-phonon scattering events. Our findings thus unveil a so-far unknown many-body state in a wide-bandgap insulator, having important implications for devices using hBN as one of their building blocks. | |
dc.description.abstract | Phonon-Mediated Quasiparticle Lifetime Renormalizations in Few-Layer Hexagonal Boron Nitride | |
dc.language | EN | |
dc.rights | Attribution 4.0 International | |
dc.rights.uri | https://creativecommons.org/licenses/by/4.0/ | |
dc.title | Phonon-Mediated Quasiparticle Lifetime Renormalizations in Few-Layer Hexagonal Boron Nitride | |
dc.title.alternative | ENEngelskEnglishPhonon-Mediated Quasiparticle Lifetime Renormalizations in Few-Layer Hexagonal Boron Nitride | |
dc.type | Journal article | |
dc.creator.author | Røst, Håkon | |
dc.creator.author | Cooil, Simon Phillip | |
dc.creator.author | Åsland, Anna Cecilie | |
dc.creator.author | Hu, Jinbang | |
dc.creator.author | Ali, Ayaz | |
dc.creator.author | Taniguchi, Takashi | |
dc.creator.author | Watanabe, Kenji | |
dc.creator.author | Belle, Branson Delano | |
dc.creator.author | Holst, Bodil | |
dc.creator.author | Sadowski, Jerzy | |
dc.creator.author | Mazzola, Federico | |
dc.creator.author | Wells, Justin William | |
cristin.unitcode | 185,15,4,90 | |
cristin.unitname | Halvlederfysikk | |
cristin.ispublished | true | |
cristin.fulltext | original | |
cristin.qualitycode | 2 | |
dc.identifier.cristin | 2169192 | |
dc.identifier.bibliographiccitation | info:ofi/fmt:kev:mtx:ctx&ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Nano Letters&rft.volume=23&rft.spage=7539&rft.date=2023 | |
dc.identifier.jtitle | Nano Letters | |
dc.identifier.volume | 23 | |
dc.identifier.issue | 16 | |
dc.identifier.startpage | 7539 | |
dc.identifier.endpage | 7545 | |
dc.identifier.doi | https://doi.org/10.1021/acs.nanolett.3c02086 | |
dc.subject.nvi | VDP::Nanoteknologi: 630VDP::Kondenserte fasers fysikk: 436 | |
dc.type.document | Tidsskriftartikkel | |
dc.type.peerreviewed | Peer reviewed | |
dc.source.issn | 1530-6984 | |
dc.type.version | PublishedVersion | |
dc.relation.project | DOE/DE-SC0012704 | |
dc.relation.project | JSPS/19H05790 | |
dc.relation.project | JSPS/20H00354 | |
dc.relation.project | JSPS/21H05233 | |
dc.relation.project | NFR/315330 | |
dc.relation.project | NFR/262633 | |
dc.relation.project | NFR/280788 | |
dc.relation.project | NFR/324183 | |
dc.relation.project | NFR/245963 | |