dc.date.accessioned | 2024-01-12T18:10:21Z | |
dc.date.available | 2024-01-12T18:10:21Z | |
dc.date.created | 2023-05-12T14:11:22Z | |
dc.date.issued | 2023 | |
dc.identifier.citation | Røst, Håkon Tosi, Ezequiel Strand, Frode Sneve Åsland, Anna Cecilie Lacovig, Paolo Lizzit, Silvano Wells, Justin William . Probing the Atomic Arrangement of Subsurface Dopants in a Silicon Quantum Device Platform. ACS Applied Materials & Interfaces. 2023, 15(18), 22637-22643 | |
dc.identifier.uri | http://hdl.handle.net/10852/106775 | |
dc.description.abstract | High-density structures of subsurface phosphorus dopants in silicon continue to garner interest as a silicon-based quantum computer platform; however, a much-needed confirmation of their dopant arrangement has been lacking. In this work, we take advantage of the chemical specificity of X-ray photoelectron diffraction to obtain the precise structural configuration of P dopants in subsurface Si:P δ-layers. The growth of δ-layer systems with different levels of doping is carefully studied and verified using X-ray photoelectron spectroscopy and low-energy electron diffraction. Subsequent diffraction measurements reveal that in all cases, the subsurface dopants primarily substitute with Si atoms from the host material. Furthermore, no signs of carrier-inhibiting P–P dimerization can be observed. Our observations not only settle a nearly decade-long debate about the dopant arrangement but also demonstrate how X-ray photoelectron diffraction is surprisingly well suited for studying subsurface dopant structure. This work thus provides valuable input for an updated understanding of the behavior of Si:P δ-layers and the modeling of their derived quantum devices. | |
dc.language | EN | |
dc.rights | Attribution 4.0 International | |
dc.rights.uri | https://creativecommons.org/licenses/by/4.0/ | |
dc.title | Probing the Atomic Arrangement of Subsurface Dopants in a Silicon Quantum Device Platform | |
dc.title.alternative | ENEngelskEnglishProbing the Atomic Arrangement of Subsurface Dopants in a Silicon Quantum Device Platform | |
dc.type | Journal article | |
dc.creator.author | Røst, Håkon | |
dc.creator.author | Tosi, Ezequiel | |
dc.creator.author | Strand, Frode Sneve | |
dc.creator.author | Åsland, Anna Cecilie | |
dc.creator.author | Lacovig, Paolo | |
dc.creator.author | Lizzit, Silvano | |
dc.creator.author | Wells, Justin William | |
cristin.unitcode | 185,15,4,90 | |
cristin.unitname | Halvlederfysikk | |
cristin.ispublished | true | |
cristin.fulltext | original | |
cristin.qualitycode | 1 | |
dc.identifier.cristin | 2147192 | |
dc.identifier.bibliographiccitation | info:ofi/fmt:kev:mtx:ctx&ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=ACS Applied Materials & Interfaces&rft.volume=15&rft.spage=22637&rft.date=2023 | |
dc.identifier.jtitle | ACS Applied Materials & Interfaces | |
dc.identifier.volume | 15 | |
dc.identifier.issue | 18 | |
dc.identifier.startpage | 22637 | |
dc.identifier.endpage | 22643 | |
dc.identifier.doi | https://doi.org/10.1021/acsami.2c23011 | |
dc.type.document | Tidsskriftartikkel | |
dc.type.peerreviewed | Peer reviewed | |
dc.source.issn | 1944-8244 | |
dc.type.version | PublishedVersion | |
dc.relation.project | NFR/262633 | |
dc.relation.project | NFR/315330 | |
dc.relation.project | NFR/324183 | |