Photoluminescence intensity of Cu-doped ZnO modulated via defect occupancy by applying electric bias

Abstract

Abstract Discovering multifunctional materials is of paramount importance for advancing the science and technology. Herein, we report on an optical phenomenon modulated by an electrical process that happened at the metal–ZnO:Cu junction, for which the light emission intensity from the photoluminescence is tuned reversibly by applying electric bias to the junction. Importantly, these observations were correlated with the x-ray absorption measurements, detecting prominent flips in Cu + /Cu 2+ oxidation state occupations in ZnO:Cu film as a function of the resistive switching. Moreover, further analysis of the x-ray absorption data revealed an additional prominent correlation—the signals interpreted as the Zn–O bond fingerprints also exhibited the modulations. By considering the whole set of data, we propose a scenario explaining the modulation phenomena.